STPST3H100UF Overview
The STPST3H100UF is a high-performance N-channel MOSFET designed for efficient power switching and management in industrial and consumer electronics. Featuring a low on-resistance and fast switching capabilities, this device optimizes power conversion efficiency and thermal performance. Its compact package supports high current handling while minimizing board space, making it ideal for demanding applications requiring reliable and robust transistor operation. Engineers and sourcing specialists will find this MOSFET suitable for enhancing power designs with improved efficiency and durability. For detailed technical specifications and procurement, visit IC Manufacturer.
STPST3H100UF Technical Specifications
| Parameter | Value |
|---|---|
| Type | N-channel MOSFET |
| Drain-Source Voltage (Vds) | 100 V |
| Continuous Drain Current (Id) @ 25??C | 60 A |
| Gate Threshold Voltage (Vgs(th)) | 2.0 ?C 4.0 V |
| Drain-Source On-Resistance (Rds(on)) | 1.7 m?? @ Vgs = 4.5 V |
| Total Gate Charge (Qg) | 61 nC |
| Power Dissipation (Pd) | 150 W |
| Operating Junction Temperature (Tj) | -55??C to 175??C |
| Package Type | TO-220 Full Pack |
STPST3H100UF Key Features
- Low On-Resistance: Minimizes conduction losses and enhances efficiency in power switching circuits.
- High Current Capability: Supports up to 60 A continuous drain current, enabling use in high-power applications with reliability.
- Fast Switching Speed: Reduces switching losses for improved performance in PWM and DC-DC converter designs.
- Robust Thermal Performance: Wide operating temperature range up to 175??C ensures stable operation in harsh environments.
Typical Applications
- DC-DC converters and power management modules in industrial and automotive electronics, where efficient high-current switching is crucial.
- Motor control circuits requiring fast switching and low conduction losses for better performance.
- Battery protection and management systems in energy storage solutions.
- High-frequency switching power supplies used in telecommunications and computing equipment.
STPST3H100UF Advantages vs Typical Alternatives
This MOSFET offers superior low on-resistance combined with a high current rating, reducing power dissipation compared to standard transistors. Its fast switching and robust thermal limits enhance system reliability and efficiency. These features provide designers with a competitive edge in power density and thermal management over typical alternatives, making it ideal for demanding industrial and automotive power applications.
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STPST3H100UF Brand Info
The STPST3H100UF is a product of STMicroelectronics, a leading global semiconductor manufacturer known for innovation in power devices and analog ICs. This MOSFET belongs to ST??s family of high-efficiency power transistors designed for optimized conduction and switching performance. STMicroelectronics combines advanced manufacturing processes with rigorous quality control to deliver reliable, high-performance components for industrial, automotive, and consumer applications.
FAQ
What is the maximum voltage rating of the STPST3H100UF?
The maximum drain-source voltage (Vds) rating is 100 volts, making it suitable for applications requiring medium voltage handling capabilities such as automotive power systems and industrial converters.
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How does the on-resistance of this MOSFET affect system efficiency?
The low drain-source on-resistance of 1.7 milliohms reduces conduction losses during operation, which directly improves overall power efficiency and reduces heat generation, enhancing device reliability and energy savings.
What package type is used for the STPST3H100UF and why is it beneficial?
It comes in a TO-220 Full Pack package, which offers excellent thermal dissipation and mechanical robustness. This package type facilitates easy mounting and reliable heat sinking in high-power applications.
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Can this MOSFET operate in high-temperature environments?
Yes, it supports an operating junction temperature range from -55??C up to 175??C, allowing stable performance in demanding thermal
