STPSC20065D STMicroelectronics Power MOSFET, N-Channel, TO-220 Package

STPSC20065D Overview

The STPSC20065D is a high-performance power semiconductor device designed for efficient switching and power management in industrial electronic applications. It integrates a Schottky diode with a power MOSFET, optimizing conduction losses and switching speeds. With a voltage rating of 65 V and a continuous drain current of 20 A, it is ideal for automotive, power supply, and motor control systems requiring robust and reliable power switching. This device offers excellent thermal performance and low on-resistance, enabling improved energy efficiency and system compactness. For more detailed technical support and product data, visit IC Manufacturer.

STPSC20065D Technical Specifications

STPSC20065D Key Features

• Integrated Schottky Diode: Reduces reverse recovery losses, enhancing switching efficiency and lowering thermal stress in power circuits.
• Low On-Resistance (R_DS(on)): Minimizes conduction losses, improving energy efficiency and extending battery life in portable and automotive applications.
• High Current Handling Capability: Supports continuous drain current of 20 A, making it suitable for high-load applications requiring robust performance.
• Wide Operating Temperature Range: Ensures reliable operation in harsh industrial environments from -55 ??C to 175 ??C junction temperature.

Typical Applications

• DC-DC converters and synchronous rectifiers in automotive and industrial power supplies, where efficient power switching is critical for system stability and energy savings.
• Motor control circuits requiring fast switching and low power dissipation for enhanced reliability and performance.
• Battery management systems in portable devices and energy storage solutions to optimize charge/discharge cycles.
• Power management in consumer electronics and embedded systems demanding compact, high-efficiency power components.

STPSC20065D Advantages vs Typical Alternatives

This device offers lower conduction and switching losses due to its integrated Schottky diode and optimized MOSFET design, outperforming standard MOSFETs without integrated diodes. Its low R_DS(on) and high current capability provide superior efficiency and thermal performance, reducing cooling requirements. The wide junction temperature range ensures enhanced reliability in demanding industrial and automotive environments, making it a preferred choice over typical discrete solutions.

STPSC20065D Brand Info

The STPSC20065D is manufactured by STMicroelectronics, a leading global semiconductor company known for innovation in power management and automotive-grade components. STMicroelectronics specializes in high-quality power MOSFETs and integrated devices designed to meet stringent industry standards for efficiency, reliability, and thermal performance. This product is part of ST??s advanced portfolio targeting power switching applications, leveraging decades of expertise in semiconductor technology to deliver robust and energy-efficient solutions for industrial and automotive markets.

FAQ

What is the maximum voltage rating of the STPSC20065D?

The device is rated for a maximum drain-source voltage of 65 V, making it suitable for medium-voltage applications such as automotive and industrial power supplies where voltage spikes may occur.

How does the integrated Schottky diode benefit system performance?

The Schottky diode reduces reverse recovery time and losses