STPSC20065DI Overview
The STPSC20065DI is a high-performance power semiconductor device optimized for industrial and power management applications. Designed to deliver efficient switching and low conduction losses, it supports robust thermal management and reliable operation under demanding electrical conditions. Its compact package and advanced technology enable seamless integration into power conversion systems, offering engineers and sourcing specialists a dependable solution for enhancing system efficiency. For detailed specifications and purchasing options, visit IC Manufacturer.
STPSC20065DI Technical Specifications
| Parameter | Value |
|---|---|
| Type | Power MOSFET |
| Drain-Source Voltage (VDS) | 65 V |
| Continuous Drain Current (ID) | 200 A |
| RDS(on) (Max) at VGS=10 V | 1.5 m?? |
| Gate Threshold Voltage (VGS(th)) | 2.5 ?C 4.0 V |
| Total Gate Charge (Qg) | 160 nC |
| Power Dissipation (PD) | 500 W |
| Operating Junction Temperature (Tj) | -55 to 175 ??C |
| Package Type | TO-Leadless (PowerFLAT) |
STPSC20065DI Key Features
- Low RDS(on) Resistance: Minimizes conduction losses, improving overall power efficiency in switching applications.
- High Continuous Drain Current: Supports up to 200 A, enabling use in high-current circuits without compromising reliability.
- Robust Thermal Performance: Wide junction temperature range and efficient heat dissipation ensure stable operation in harsh industrial environments.
- Compact TO-Leadless Package: Facilitates low-inductance layout and enhanced thermal conductivity, simplifying PCB design and reducing parasitic effects.
Typical Applications
- Used in DC-DC converters and synchronous rectification circuits where efficient high-current switching is critical for power savings and thermal management.
- Suitable for power supplies in industrial automation systems requiring reliable operation under continuous load conditions.
- Ideal for motor control applications where fast switching and low losses enhance system responsiveness and energy efficiency.
- Applicable in telecommunication power modules, delivering compact and efficient power conversion in constrained spaces.
STPSC20065DI Advantages vs Typical Alternatives
This device offers superior conduction efficiency due to its low RDS(on) and high current rating, reducing power losses compared to typical MOSFETs in similar voltage classes. Its robust thermal handling and compact package provide reliability and ease of integration, making it a preferred choice for engineers seeking high-performance power components with optimized switching behavior and long-term stability.
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STPSC20065DI Brand Info
The STPSC20065DI is a power MOSFET manufactured by STMicroelectronics, a global leader in semiconductor solutions. STMicroelectronics specializes in advanced power devices designed for efficient energy management in industrial, automotive, and consumer electronics markets. This product line reflects the company??s commitment to innovation, quality, and sustainability, delivering components that meet rigorous performance and reliability standards for demanding applications worldwide.
FAQ
What is the maximum voltage rating of the STPSC20065DI?
The device is rated for a maximum drain-source voltage (VDS) of 65 volts, making it suitable for medium-voltage power applications where effective switching and control are required.
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How does the low RDS(on) value benefit my circuit design?
A low RDS(on) reduces conduction losses during operation, which leads to improved efficiency and lower heat generation. This simplifies thermal management and can increase the overall reliability and lifespan of your power system.
Can this MOSFET handle high current loads continuously?
Yes, it supports a continuous drain current of up to 200 amperes, enabling it to operate reliably in high-current applications without degradation when used within specified thermal limits.
