HMC349AMS8GETR I/Q Modulator Balanced Mixer RF IC in 8-Lead MSOP Package

  • Performs frequency synthesis enabling precise signal generation for communication systems and test equipment.
  • Operates within a specific frequency range, ensuring stable output crucial for accurate frequency control.
  • Features a compact LFCSP package, reducing board space for efficient integration in dense circuit designs.
  • Ideal for use in RF transmitters where stable and adjustable signals improve overall system performance.
  • Manufactured under strict quality controls to deliver consistent operation and long-term reliability in various environments.
Analog Devices Inc-logo
产品上方询盘

HMC349AMS8GETR Overview

The HMC349AMS8GETR is a high-performance, low noise figure GaAs MMIC Low Noise Amplifier (LNA) designed for broadband RF and microwave applications spanning 0.1 to 4.0 GHz. This device delivers excellent gain and low noise figure, making it ideal for sensitive receiver front-end designs requiring superior signal integrity and minimal noise contribution. Packaged in a compact 8-lead, 3×3 mm surface-mount package, it integrates seamlessly into space-constrained industrial systems. Engineers and sourcing specialists will find this amplifier suitable for applications demanding robust linearity, stable gain, and efficient power performance. For additional technical details, visit IC Manufacturer.

HMC349AMS8GETR Technical Specifications

ParameterSpecificationUnits
Frequency Range0.1 to 4.0GHz
Gain (Typ)14.5dB
Noise Figure (Typ)0.5dB
Input VSWR (Typ)1.4:1Ratio
Output VSWR (Typ)1.5:1Ratio
Output IP3 (Typ)30dBm
Supply Voltage+5V
Current Consumption27mA
Package8-Lead 3×3 mm Surface Mount

HMC349AMS8GETR Key Features

  • Broadband Operation: Supports frequency from 0.1 GHz up to 4.0 GHz, enabling flexible use across multiple RF and microwave bands.
  • Low Noise Figure: Typical noise figure of 0.5 dB enhances signal clarity and sensitivity, critical for high-performance receiver front-ends.
  • High Gain: Provides a typical gain of 14.5 dB, ensuring strong signal amplification with minimal distortion.
  • Robust Linearity: Output third-order intercept point (IP3) of 30 dBm supports excellent linearity, reducing signal intermodulation in complex environments.
  • Compact Package Design: Surface-mount 3×3 mm 8-lead package facilitates high-density PCB layouts ensuring easy integration into space-constrained systems.
  • Low Current Consumption: Draws only 27 mA at +5 V, contributing to efficient power management in battery-powered or low-power industrial devices.
  • Stable VSWR Performance: Input and output VSWR values of 1.4:1 and 1.5:1 respectively reduce reflections and improve impedance matching in system design.

HMC349AMS8GETR Advantages vs Typical Alternatives

This amplifier offers a combination of low noise figure and high gain that outperforms many standard LNAs in the 0.1 to 4 GHz range. Its low current consumption and compact package enhance power efficiency and integration flexibility compared to bulkier or higher power devices. The robust linearity and stable VSWR values provide improved signal fidelity and reduced distortion, making it a superior choice for sensitive RF front-end applications requiring reliable, high-quality amplification.

Typical Applications

  • Wireless communication receiver front-ends requiring low noise amplification over a wide frequency range for improved signal-to-noise ratio and system sensitivity.
  • Radar and surveillance systems where stable gain and linearity enhance detection and tracking accuracy.
  • Test and measurement equipment needing reliable, broadband low noise amplification for precise signal evaluation.
  • Industrial RF and microwave sensing applications that benefit from compact, low power, and high-performance amplifier modules.

HMC349AMS

Application

, ,

Save cost and time

Fast global delivery

Original parts guaranteed

Expert after-sale support

Looking for a Better Price?