HMC344ATCPZ-EP-R7 Overview
The HMC344ATCPZ-EP-R7 is a high-performance GaAs MMIC low noise amplifier designed for operation within the 4 to 8 GHz frequency range. It delivers a low noise figure of 1.3 dB and offers a high gain of 22 dB, making it ideal for sensitive RF front-end amplification in communication and radar systems. This device features an integrated bias network and is housed in a compact 3×3 mm leadless package, enabling easy integration into complex systems while maintaining reliability. Engineers and sourcing specialists can rely on this amplifier for consistent performance in demanding industrial and defense applications. For more detailed product information, please visit IC Manufacturer.
HMC344ATCPZ-EP-R7 Technical Specifications
| Parameter | Specification |
|---|---|
| Frequency Range | 4.0 ?C 8.0 GHz |
| Gain | 22 dB (typical) |
| Noise Figure | 1.3 dB (typical) |
| Input Return Loss | 12 dB (typical) |
| Output Return Loss | 10 dB (typical) |
| Output Power at 1 dB Compression (P1dB) | 21 dBm (typical) |
| Third-Order Intercept Point (IP3) | 34 dBm (typical) |
| Supply Voltage | +5 V |
| Current Consumption | 70 mA (typical) |
| Package | 3 x 3 mm leadless |
HMC344ATCPZ-EP-R7 Key Features
- Wide frequency coverage: Operates efficiently from 4 to 8 GHz, enabling versatile deployment in multiple RF bands.
- Low noise figure: Minimizes signal degradation, enhancing system sensitivity for improved detection and communication quality.
- High gain: Provides 22 dB typical gain to amplify weak RF signals without compromising linearity or adding excessive distortion.
- Integrated bias network: Simplifies external circuitry requirements and reduces overall system complexity.
- Compact form factor: The 3 x 3 mm leadless package facilitates high-density PCB layouts and reliable thermal performance.
- Robust linearity: High IP3 and P1dB levels ensure excellent handling of strong signals in congested RF environments.
- Low power consumption: Operates at 70 mA typical current, balancing performance with energy efficiency in power-sensitive applications.
HMC344ATCPZ-EP-R7 Advantages vs Typical Alternatives
This RF low noise amplifier offers superior sensitivity and gain compared to typical discrete transistor solutions, ensuring higher signal fidelity with lower noise figures. Its integrated bias network reduces the need for additional external components, streamlining design and improving reliability. The compact leadless package supports dense system integration and thermal management, giving it an edge over larger, less efficient amplifiers commonly found in similar frequency bands.
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Typical Applications
- Wireless communication infrastructure: Used in base stations and repeaters to amplify weak signals across C-band frequencies, enhancing network coverage and data throughput.
- Radar systems: Supports radar front-end modules requiring low noise amplification for accurate target detection and tracking in the 4 to 8 GHz range.
- Test and measurement equipment: Integrates into RF signal analyzers and generators to improve sensitivity and measurement accuracy.
- Satellite communication terminals: Amplifies uplink and downlink signals, maintaining signal integrity in compact satellite ground stations.
HMC344ATCPZ-EP-R7 Brand Info
This amplifier is part of a reputable line of GaAs MMIC devices engineered for high-frequency RF applications. The product??s design emphasizes low noise, high gain, and robust linearity to meet the stringent demands of modern wireless and defense systems. Packaged in a small, leadless format, it reflects the brand??s commitment to delivering compact, high-performance components that simplify integration and enhance system reliability.
FAQ
What frequency range does this amplifier support?
The device operates efficiently over a wide frequency range from 4
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