HMC199AMS8ETR Overview
The HMC199AMS8ETR is a high-performance gallium arsenide (GaAs) MMIC low noise amplifier (LNA) optimized for broadband operation from 6 to 18 GHz. Designed for applications requiring exceptional noise figure and linearity, this device delivers a typical noise figure of 1.5 dB and a gain of 20 dB, making it ideal for radar, electronic warfare, and communication systems. The amplifier operates on a single 5 V supply with a low current consumption of 60 mA, ensuring efficient power usage. Packaged in a compact 3×3 mm 8-lead E-Lead surface mount configuration, it supports easy integration into densely packed RF front-end modules. For detailed product data, visit IC Manufacturer.
HMC199AMS8ETR Technical Specifications
| Parameter | Specification |
|---|---|
| Frequency Range | 6 to 18 GHz |
| Gain | 20 dB (typical) |
| Noise Figure | 1.5 dB (typical) |
| Input Return Loss | 12 dB (typical) |
| Output Return Loss | 12 dB (typical) |
| Output Power at 1 dB Compression (P1dB) | +13 dBm |
| Input Third-Order Intercept Point (IP3) | +27 dBm |
| Supply Voltage | +5 V |
| Supply Current | 60 mA |
| Package | 3×3 mm, 8-lead E-Lead Surface Mount |
HMC199AMS8ETR Key Features
- Wideband Operation: Covers 6 to 18 GHz enabling versatility across multiple RF applications including radar and communication systems.
- Low Noise Figure: Typical noise figure of 1.5 dB enhances system sensitivity and improves signal-to-noise ratio for weak signal amplification.
- High Gain: 20 dB gain ensures strong signal amplification with minimal signal distortion, crucial for high-performance RF front ends.
- High Linearity: +27 dBm input IP3 supports excellent linearity, reducing intermodulation distortion in crowded spectral environments.
- Compact Packaging: The 3×3 mm 8-lead E-Lead SMT package supports high-density PCB layouts and automated assembly processes.
- Low Power Consumption: Operating at 60 mA current on a 5 V supply minimizes thermal dissipation and extends system reliability.
- Robust Return Loss: Input/output return loss of 12 dB ensures good impedance matching for efficient power transfer and reduced signal reflections.
HMC199AMS8ETR Advantages vs Typical Alternatives
This amplifier offers a superior combination of low noise figure, high gain, and wide operating frequency range compared to typical LNAs. Its gallium arsenide technology ensures better linearity and noise performance, which translates to improved sensitivity and signal integrity in demanding industrial and defense systems. Additionally, the low power consumption and compact surface mount packaging provide significant integration and thermal management benefits over discrete or older semiconductor solutions.
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Typical Applications
- Radar and Electronic Warfare Systems: Enhances weak signal detection with low noise and high gain across wide frequency bands for reliable target identification.
- Satellite Communications: Supports wideband LNA needs in ground stations and transceivers with its low noise figure and linearity.
- Microwave Point-to-Point Radios: Provides robust amplification with low distortion, improving link quality and system sensitivity.
- Test and Measurement Equipment: Enables precise signal amplification in broadband test setups requiring consistent performance from 6 to 18 GHz.
HMC199AMS8ETR Brand Info
The HMC199AMS8ETR is part of a specialized line of microwave monolithic integrated circuits produced by a leading manufacturer of high-frequency semiconductor devices. The product line is known for integrating advanced GaAs technology to deliver high-performance, reliable RF components suited for industrial, defense, and commercial applications. This device exemplifies the brand??s commitment to innovation, quality, and support for engineers designing next-generation RF systems.
