HMC194AMS8ETR Overview
The HMC194AMS8ETR is a high-performance GaAs MMIC low noise amplifier designed for operation in the 6 to 18 GHz frequency range. This device offers a low noise figure and high gain, making it ideal for sensitive RF front-end applications. Packaged in an 8-lead SOIC form factor, it supports ease of integration in compact systems requiring reliable broadband amplification. With its exceptional linearity and low power consumption, this amplifier is well-suited for radar, communication, and test instrumentation applications. For more detailed technical support and product availability, visit IC Manufacturer.
HMC194AMS8ETR Technical Specifications
| Parameter | Specification |
|---|---|
| Frequency Range | 6 ?C 18 GHz |
| Noise Figure | 3.5 dB typical at 12 GHz |
| Gain | 15 dB typical |
| Input Return Loss | 12 dB typical |
| Output Return Loss | 10 dB typical |
| Output Power at 1 dB Compression (P1dB) | +16 dBm typical |
| Supply Voltage | +5 V |
| Supply Current | 45 mA typical |
| Package | 8-lead SOIC |
| Operating Temperature Range | -40??C to +85??C |
HMC194AMS8ETR Key Features
- Broadband Operation: Covers 6 to 18 GHz, enabling flexible use across multiple RF systems and frequency bands.
- Low Noise Figure: Provides a typical 3.5 dB noise figure at 12 GHz, enhancing receiver sensitivity in communication and radar applications.
- High Gain: Offers approximately 15 dB gain, ensuring strong signal amplification with minimal distortion.
- Compact 8-Lead SOIC Package: Facilitates easy PCB integration and thermal management in space-constrained designs.
- Low Power Consumption: Operates at 45 mA supply current, balancing performance and power efficiency for industrial use.
- Robust Linearity: +16 dBm P1dB output power supports high dynamic range and minimizes signal compression effects.
- Wide Operating Temperature Range: Reliable performance from -40??C to +85??C suits harsh industrial environments.
HMC194AMS8ETR Advantages vs Typical Alternatives
This amplifier stands out with a combination of low noise figure and high gain across a broad 6 to 18 GHz range, outperforming many alternatives that offer narrower bandwidth or higher noise. Its low power consumption and compact SOIC footprint enhance system integration and reliability, making it ideal for applications demanding sensitive amplification with minimal thermal impact and space requirements. The device??s robust linearity further ensures superior signal fidelity compared to standard low noise amplifiers.
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Typical Applications
- Radar and electronic warfare systems requiring broadband low noise amplification for improved target detection and signal clarity.
- Satellite and point-to-point communication equipment operating in C- to Ku-band frequencies.
- Test and measurement instrumentation where precise, low noise gain is critical for accurate signal characterization.
- Military and aerospace RF front-end modules demanding reliable operation under wide temperature ranges and compact form factors.
HMC194AMS8ETR Brand Info
The HMC194AMS8ETR is part of a specialized line of GaAs MMIC low noise amplifiers designed for high-frequency, high-performance RF applications. Manufactured with advanced semiconductor processes, this product combines superior gain, low noise, and broadband capability in a small, robust package. It reflects the brand??s commitment to delivering reliable, industry-grade components optimized for demanding environments in aerospace, defense, and commercial communications markets.
FAQ
What is the typical noise figure of this amplifier in its operating band?
The device typically exhibits a noise figure of 3.5 dB at 12 GHz, which is indicative of its low noise performance suitable for sensitive RF front-end applications within the 6 to 18 GHz frequency range.
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