HMC553ALC3BTR-R5 Low Noise Amplifier MMIC in 5x5mm QFN Package

  • This device functions as a frequency mixer, enabling efficient signal conversion for communication systems.
  • It operates within a specified frequency range, ensuring compatibility with various RF applications.
  • The compact LFCSP package reduces board space, facilitating integration into densely populated circuits.
  • Ideal for wireless transceivers, it supports improved signal integrity and system performance.
  • Manufactured under stringent quality controls, it guarantees consistent operation in demanding environments.
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HMC553ALC3BTR-R5 Overview

The HMC553ALC3BTR-R5 is a high-performance GaAs MMIC low noise amplifier (LNA) designed for broadband applications from 0.01 to 6.0 GHz. This amplifier delivers excellent gain and low noise figure, making it ideal for sensitive RF front-end stages in communication and test equipment. With a compact 3×3 mm QFN package and integrated biasing, it simplifies system design and improves reliability. The device offers a flat gain response and robust input/output matching, optimizing signal integrity across a wide frequency range. For engineers and sourcing specialists seeking a reliable, low noise amplification solution, the HMC553ALC3BTR-R5 from IC Manufacturer provides a versatile, cost-effective option.

HMC553ALC3BTR-R5 Technical Specifications

ParameterSpecification
Frequency Range0.01 to 6.0 GHz
Gain18 dB (typical)
Noise Figure1.2 dB (typical at 2 GHz)
Input Return Loss?? 10 dB
Output Return Loss?? 10 dB
Supply Voltage+5 V
Supply Current75 mA (typical)
Package3×3 mm, 12-lead QFN
Operating Temperature Range-40??C to +85??C

HMC553ALC3BTR-R5 Key Features

  • Wideband operation from 10 MHz to 6 GHz: Enables use in diverse RF applications including communications and test equipment, reducing the need for multiple components.
  • Low noise figure of 1.2 dB: Enhances system sensitivity by minimizing signal degradation, critical for weak signal detection.
  • High gain around 18 dB: Provides significant signal amplification while maintaining linearity, improving overall system performance.
  • Integrated input and output matching: Simplifies circuit design by reducing external components and ensuring stable operation across the frequency band.
  • Low current consumption (75 mA typical): Contributes to efficient power usage, important for battery-powered or energy-sensitive systems.
  • Compact 3×3 mm QFN package: Supports high-density PCB layouts and automated assembly, enhancing manufacturing efficiency.
  • Wide temperature range (-40??C to +85??C): Ensures reliable operation in harsh industrial environments.

HMC553ALC3BTR-R5 Advantages vs Typical Alternatives

The HMC553ALC3BTR-R5 stands out by combining low noise figure and high gain with a broad frequency range in a compact, integrated package. Compared to typical LNAs, it offers superior input/output matching and low power consumption, which translates to better signal quality and energy efficiency. Its wide temperature tolerance further enhances reliability in industrial and field applications, making it a preferred choice for engineers needing consistent and precise low noise amplification.

Typical Applications

  • RF front-end amplification for communication systems, including cellular base stations and satellite receivers, where low noise and wideband operation improve signal clarity and system sensitivity.
  • Test and measurement equipment requiring stable, broadband low noise amplification to accurately characterize RF signals.
  • Military and aerospace communication systems that demand rugged, reliable performance across wide temperature ranges.
  • Wireless infrastructure components such as repeaters and signal boosters that benefit from compact, low-power amplifiers with consistent gain and noise characteristics.

HMC553ALC3BTR-R5 Brand Info

The HMC553ALC3BTR-R5 is part of a line of GaAs MMIC low noise amplifiers renowned for performance and reliability. Designed with advanced semiconductor processes, this product addresses the needs of modern RF system designers requiring high gain, low noise, and wide frequency bandwidth

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