JANTXV2N336-Transistor NPN Power Transistor in TO-39 Metal Can Package by ON Semiconductor

JANTXV2N336-Transistor Overview

The JANTXV2N336 transistor is a high-performance bipolar junction transistor (BJT) designed for robust switching and amplification applications. It features a silicon NPN configuration with reliable junction breakdown voltages and optimized current gain for industrial and military-grade environments. This transistor is constructed to meet stringent reliability standards, ensuring stable operation under varying temperature and voltage conditions. Its robust design supports medium power handling with low noise characteristics, making it ideal for precision analog and switching circuits. For trusted semiconductor components, consider sourcing from IC Manufacturer.

JANTXV2N336-Transistor Technical Specifications

JANTXV2N336-Transistor Key Features

• High current gain: Supports efficient signal amplification with gain ranging from 40 to 160, enhancing circuit sensitivity and performance.
• Robust voltage ratings: Collector-base and collector-emitter voltages up to 60 V and 40 V respectively, ensuring stable switching under high voltage stress.
• Low noise operation: Ideal for precision analog circuits where signal integrity and minimal distortion are critical.
• Compact TO-18 package: Facilitates easy integration into compact board layouts while providing excellent thermal dissipation.

Typical Applications

• Switching and amplification in industrial control systems where reliable performance under variable loads is essential.
• Audio signal amplification circuits requiring low noise and stable gain characteristics.
• Military and aerospace electronic systems demanding components with strict quality and reliability standards.
• General-purpose transistor applications including driver stages in analog and digital circuits.

JANTXV2N336-Transistor Advantages vs Typical Alternatives

This transistor offers superior reliability and consistent gain performance compared to many general-purpose alternatives. Its robust voltage ratings and low noise profile provide engineers with enhanced accuracy and stability in sensitive circuits. The metal TO-18 package further ensures excellent thermal management and longevity, making it an advantageous choice for demanding industrial and military applications.

JANTXV2N336-Transistor Brand Info

The JANTXV2N336 is a JAN (Joint Army-Navy) certified transistor, adhering to military standards for quality and reliability. Typically manufactured by established semiconductor companies specializing in military-grade components, this transistor is designed for rigorous environments where failure is not an option. The JAN prefix denotes compliance with MIL-PRF-19500 standards, ensuring superior performance under temperature extremes, vibration, and mechanical stress. This product is widely recognized among defense contractors and industrial manufacturers for dependable operation in critical systems.

FAQ

What type of transistor is the JANTXV2N336?

The device is an NPN bipolar junction transistor (BJT) designed for switching and amplification. It operates with a silicon-based semiconductor and is packaged in a TO-18 metal can for robust physical and thermal properties.

What are the maximum voltage ratings for this transistor?

The maximum collector-base voltage (VCBO) is 60 volts, the collector-emitter voltage (VCEO) is 40 volts, and the emitter-base voltage (VEBO) is 5 volts. These limits should not be exceeded to maintain device integrity and performance.

What current can the transistor handle safely?

This transistor supports a maximum collector current (IC) of 800 milliamperes, suitable for medium power applications. Proper heat dissipation and circuit design help maintain safe operating conditions.

How does the current gain (hFE) affect circuit design?

The DC current gain ranges from 40 to 160 depending on collector