JANTXV2N335A-Transistor by ON Semiconductor, NPN Power Transistor, TO-66 Package

  • This transistor amplifies electrical signals, enabling efficient switching and control in electronic circuits.
  • Its high voltage rating ensures stable operation under demanding electrical conditions, enhancing circuit durability.
  • The compact package offers board-space savings, making it suitable for designs with limited physical area.
  • Ideal for use in power regulation applications, it helps maintain consistent performance in variable load environments.
  • Manufactured to meet stringent quality standards, this component supports long-term reliability in diverse systems.
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JANTXV2N335A-Transistor Overview

The JANTXV2N335A transistor is a high-performance bipolar junction transistor (BJT) designed for reliable switching and amplification in industrial and military-grade electronics. Featuring a robust collector-emitter voltage rating and high gain, this transistor is suitable for demanding applications requiring durability and precision. Its JAN (Joint Army-Navy) certification ensures enhanced reliability and extended temperature operation, making it ideal for aerospace, defense, and rugged industrial environments. For sourcing and technical details, visit IC Manufacturer.

JANTXV2N335A-Transistor Technical Specifications

Parameter Specification
Device Type NPN Bipolar Junction Transistor
Collector-Emitter Voltage (VCEO) 60 V
Collector Current (IC) 10 A (continuous)
Power Dissipation (PD) 125 W (max)
DC Current Gain (hFE) 20 to 70
Transition Frequency (fT) 4 MHz (typical)
Operating Temperature Range -55??C to +200??C (military grade)
Package Type TO-3 Metal Can

JANTXV2N335A-Transistor Key Features

  • High collector current capability: Supports continuous currents up to 10 A, enabling use in power amplification and switching applications requiring substantial load handling.
  • Wide operating temperature range: Certified for -55??C to +200??C operation, ensuring stable performance in extreme environments such as aerospace or military systems.
  • Robust power dissipation: Rated for 125 W maximum power dissipation, facilitating high-power operation without thermal failure.
  • Reliable military-grade construction: Packaged in a TO-3 metal casing, providing excellent heat dissipation and mechanical durability.

Typical Applications

  • Power amplification circuits in military and aerospace equipment requiring high current and voltage handling with dependable operation under harsh conditions.
  • Switching devices in industrial control systems where ruggedness and thermal stability are critical.
  • Driver stages in relay and solenoid control circuits demanding robust transistor performance.
  • High-reliability electronic modules in defense communication systems operating across wide temperature ranges.

JANTXV2N335A-Transistor Advantages vs Typical Alternatives

This transistor offers superior power handling and thermal endurance compared to standard commercial BJTs, thanks to its high collector current rating and military-grade temperature certification. Its robust TO-3 packaging enhances heat dissipation and mechanical reliability, making it ideal for rugged industrial and defense applications. The combination of high gain and voltage ratings provides precise control and amplification with durability that typical alternatives may lack.

JANTXV2N335A-Transistor Brand Info

The JANTXV2N335A is a military-specification transistor originally standardized under the Joint Army-Navy (JAN) system, historically used by leading semiconductor manufacturers such as Motorola, ON Semiconductor, and Fairchild. This device is produced to meet stringent military and aerospace standards, ensuring enhanced reliability, consistent performance, and long-term availability. Its legacy continues under various modern suppliers maintaining JAN certification, trusted by engineers sourcing components for high-reliability applications.

FAQ

What does the “JANTX” prefix signify in this transistor’s part number?

The “JANTX” prefix indicates that the transistor is manufactured to Joint Army-Navy (JAN) specifications with tightened screening and testing processes. The “TX” denotes a high-reliability quality level suitable for military and aerospace applications, ensuring robust performance under extreme environmental conditions.

What are the key electrical limits I should consider when integrating this transistor?

Pay attention to the maximum collector-emitter voltage of 60 V and continuous collector current rating of 10 A. Exceeding these parameters can cause device failure. Additionally, ensure that power dissipation stays

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