JAN2N333ALT2-Transistor Overview
The JAN2N333ALT2 is a high-performance NPN bipolar junction transistor designed for switching and amplification applications in industrial and military-grade electronics. It features robust electrical characteristics suitable for medium-power circuits, ensuring reliable operation under demanding conditions. The device??s construction supports enhanced gain and low noise, making it ideal for use in precision signal processing. Sourced from a trusted supplier, this transistor meets stringent quality standards essential for aerospace and defense applications. Engineers seeking a dependable, versatile transistor for medium voltage and current requirements will find this component well-suited to their design needs. For detailed information and procurement, visit IC Manufacturer.
JAN2N333ALT2-Transistor Technical Specifications
| Parameter | Value |
|---|---|
| Transistor Type | NPN Bipolar Junction Transistor |
| Collector-Emitter Voltage (VCEO) | 60 V |
| Collector Current (IC) | 8 A |
| Power Dissipation (PD) | 115 W |
| DC Current Gain (hFE) | 20 to 70 |
| Transition Frequency (fT) | 3 MHz |
| Package Type | TO-66 Metal Can |
| Operating Junction Temperature Range | -65??C to +200??C |
JAN2N333ALT2-Transistor Key Features
- High Collector Current Capacity: Supports up to 8 A collector current, enabling handling of medium-power loads efficiently.
- Wide Operating Temperature Range: Performs reliably between -65??C and +200??C, suitable for harsh and extreme environments.
- Robust Power Dissipation: Capable of dissipating 115 W, ensuring stable operation in power-intensive applications.
- Precision Gain Control: Maintains a DC current gain range between 20 and 70, providing predictable amplification performance.
Typical Applications
- Switching and amplification in military and aerospace electronic circuits where reliability and thermal stability are critical.
- Medium-power motor control circuits requiring robust transistor performance under variable loads.
- Signal amplification in industrial instrumentation and control systems operating at moderate frequencies.
- Power regulation and driver circuits in avionics and defense hardware designs.
JAN2N333ALT2-Transistor Advantages vs Typical Alternatives
This transistor offers superior thermal stability and high power dissipation compared to typical alternatives, making it well-suited for demanding industrial and military environments. Its wide operating temperature range and robust construction ensure enhanced reliability and longevity. With a balanced gain and current handling capacity, it provides precise switching and amplification while maintaining efficiency, critical for mission-critical applications requiring consistent performance.
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JAN2N333ALT2-Transistor Brand Info
The JAN2N333ALT2 is manufactured under stringent military standards, commonly associated with established semiconductor suppliers specializing in JAN (Joint Army-Navy) components. These transistors are produced to meet MIL-STD-883 for quality and reliability, ensuring suitability for defense and aerospace applications. The metal can TO-66 package provides mechanical durability and excellent heat dissipation, reflecting the brand??s commitment to delivering rugged and trustworthy components for critical electronic systems.
FAQ
What is the maximum collector current rating of this transistor?
The maximum collector current for this transistor is specified at 8 amperes, enabling it to handle medium-power loads effectively in various switching and amplification applications.
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What temperature range can this transistor operate within?
This transistor supports a wide operating junction temperature range from -65??C to +200??C, making it suitable for use in extreme environments including military and aerospace applications.
What package type does this transistor come in?
The device is housed in a TO-66 metal can package, which offers enhanced mechanical strength and improved thermal management compared to plastic packages.
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How does the DC current gain affect transistor performance?
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