JAN2N336T2-Transistor Overview
The JAN2N336T2 transistor is a robust NPN bipolar junction transistor designed for general-purpose amplification and switching applications. Engineered for military and industrial use, it features high voltage and current handling capabilities, ensuring reliable performance in demanding environments. This transistor offers a maximum collector-emitter voltage of 100V and collector current up to 0.8A, making it suitable for a wide range of electronic circuits requiring moderate power and high gain. Supplied in a TO-18 package, it provides excellent thermal dissipation and mechanical durability. For more detailed information, trust IC Manufacturer as your reliable source.
JAN2N336T2-Transistor Technical Specifications
| Parameter | Specification |
|---|---|
| Transistor Type | NPN Bipolar Junction Transistor |
| Collector-Emitter Voltage (VCEO) | 100 V |
| Collector-Base Voltage (VCBO) | 100 V |
| Emitter-Base Voltage (VEBO) | 5 V |
| Collector Current (IC) | 0.8 A |
| Power Dissipation (Ptot) | 625 mW |
| Transition Frequency (fT) | 100 MHz |
| DC Current Gain (hFE) | 40 to 300 |
| Package | TO-18 Metal Can |
JAN2N336T2-Transistor Key Features
- High voltage tolerance: Supports up to 100V collector-emitter voltage, enabling use in circuits with higher voltage requirements.
- Moderate current capacity: Handles collector currents up to 0.8A, suitable for switching and amplification in medium power applications.
- Wide gain range: Offers DC current gain between 40 and 300, providing design flexibility for varying amplification needs.
- Durable TO-18 package: Metal can package ensures efficient heat dissipation and mechanical protection for reliable operation in harsh environments.
Typical Applications
- Signal amplification in analog circuits where moderate power and voltage handling are required, such as audio preamplifiers or sensor interfaces.
- General-purpose switching in power regulation circuits and relay drivers within industrial control systems.
- Low noise amplification stages in military and aerospace electronic equipment, benefiting from the transistor??s rugged construction.
- Test and measurement devices requiring reliable performance under varying temperature and voltage conditions.
JAN2N336T2-Transistor Advantages vs Typical Alternatives
This transistor delivers a balanced combination of high voltage capacity and moderate current handling, surpassing many standard small-signal transistors. Its metal TO-18 package enhances thermal management and durability compared to plastic encapsulated devices. The wide DC gain range offers design versatility, making it a reliable choice for applications demanding consistent performance and robustness under elevated stress conditions.
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JAN2N336T2-Transistor Brand Info
The JAN2N336T2 is part of the JAN (Joint Army-Navy) series of transistors, originally developed to meet stringent military specifications for durability and performance. These devices are manufactured under rigorous quality control to ensure compliance with MIL-STD-883 standards. The JAN prefix indicates that the transistor is qualified for use in military and aerospace applications, recognized for exceptional reliability and long-term stability. The 2N336T2 designation identifies the transistor??s electrical characteristics within the NPN BJT family. This product is typically provided by manufacturers specializing in high-reliability semiconductors for defense and industrial sectors.
FAQ
What type of transistor is the JAN2N336T2 and what applications is it best suited for?
The device is an NPN bipolar junction transistor designed primarily for general-purpose amplification and switching. Its high voltage rating and moderate current capacity make it ideal for industrial, military, and aerospace applications requiring reliable operation under demanding conditions.
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What package does the transistor come in and why is it important?
It is supplied in a TO-18 metal can package. This packaging provides superior thermal dissipation and physical protection compared to plastic







