JAN2N335A-Transistor NPN Amplifier Transistor in TO-18 Metal Can Package by ON Semiconductor

JAN2N335A-Transistor Overview

The JAN2N335A is a high-voltage NPN bipolar junction transistor designed for robust switching and amplification in demanding electronic circuits. With a voltage rating suitable for industrial and military applications, it delivers reliable performance under elevated stress conditions. This transistor features a sturdy metal can package that enhances thermal dissipation and mechanical stability, making it ideal for environments requiring long-term durability. Engineers and sourcing specialists can depend on its consistent gain characteristics and high voltage handling for precision control in power regulation, signal amplification, and switching. For detailed sourcing and datasheet information, visit IC Manufacturer.

JAN2N335A-Transistor Technical Specifications

JAN2N335A-Transistor Key Features

• High voltage tolerance: Supports collector-emitter voltages up to 140 V, enabling use in high-voltage switching and amplification circuits.
• Diverse gain range: DC current gain from 40 to 160 provides flexibility for signal amplification across multiple circuit designs.
• Robust package design: The TO-18 metal can package offers excellent thermal conductivity and mechanical protection, enhancing reliability under harsh conditions.
• Moderate frequency response: With a typical transition frequency of 8 MHz, it performs well in low to mid-frequency analog applications.

Typical Applications

• High-voltage switching circuits where reliable control of power is critical, such as industrial motor drivers and relay drivers.
• Analog signal amplification in audio and instrumentation circuits requiring stable gain and low distortion.
• General-purpose inverters and power converters benefiting from its robust voltage and current handling capabilities.
• Military and aerospace electronics that demand rugged transistor solutions with proven reliability over extended operating periods.

JAN2N335A-Transistor Advantages vs Typical Alternatives

This transistor offers a strong combination of high voltage ratings and current capacity within a reliable metal can package, providing enhanced thermal management and durability compared to plastic-encapsulated alternatives. Its wide gain range enables flexible circuit design, while the proven technology ensures consistent performance in harsh or critical environments. These factors make it preferable for industrial and military-grade electronics requiring dependable switching and amplification.

JAN2N335A-Transistor Brand Info

The JAN2N335A is a military-grade transistor classified under the Joint Army-Navy (JAN) specification, indicating it meets stringent military standards for quality and reliability. Typically produced by reputable semiconductor manufacturers adhering to MIL-STD-750 testing procedures, this transistor is recognized for its robust construction and performance stability. The JAN prefix signals its suitability for defense and aerospace applications, where rigorous environmental and electrical stress testing is mandatory. This product is often sourced through authorized distributors specializing in MIL-spec components to ensure authenticity and compliance.

FAQ

What does the JAN prefix indicate for the 2N335A transistor?

The JAN prefix stands for Joint Army-Navy, signifying that the transistor meets military specifications for quality, reliability, and performance. Components with this designation undergo rigorous testing according to MIL-STD standards, making them suitable for defense and aerospace applications.

What are the maximum voltage ratings for this transistor?

The device supports a collector-emitter voltage (Vceo) of up to 140 volts and a collector-base voltage (Vcbo) of 160 volts. These ratings enable