JANTX2N3500U4-Transistor Overview
The JANTX2N3500U4 is a high-voltage NPN bipolar junction transistor (BJT) designed for rugged, military-grade applications requiring reliable switching and amplification. Offering a collector-base voltage rating of 350 V and continuous collector current capacity up to 3 A, this transistor ensures robust performance under demanding conditions. Its hermetically sealed metal can package provides enhanced environmental protection, making it suitable for aerospace, defense, and industrial control systems. The device is optimized for linear and switching applications, delivering stable gain characteristics and reliable operation in harsh environments. For sourcing and detailed specifications, visit the IC Manufacturer website.
JANTX2N3500U4-Transistor Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-Base Voltage (VCBO) | 350 | V |
| Collector-Emitter Voltage (VCEO) | 300 | V |
| Emitter-Base Voltage (VEBO) | 7 | V |
| Continuous Collector Current (IC) | 3 | A |
| Power Dissipation (PD) | 30 | W |
| DC Current Gain (hFE) | 40 to 160 | (at IC=0.5A) |
| Transition Frequency (fT) | 4 | MHz |
| Operating Temperature Range | -65 to +200 | ??C |
JANTX2N3500U4-Transistor Key Features
- High voltage handling: Supports up to 350 V collector-base voltage, ensuring suitability for high-voltage switching and power amplification tasks.
- Robust current capacity: Continuous collector current rating of 3 A enables reliable operation in medium-power circuits without thermal overload risks.
- Hermetic metal can package: Provides superior environmental protection to maintain performance over extended life cycles in harsh environments.
- Wide operating temperature range: Ensures stable performance from -65 ??C to +200 ??C, critical for aerospace and military applications.
Typical Applications
- High-voltage power switching and linear amplification in aerospace and defense systems, where ruggedness and reliability are paramount.
- Industrial control circuits requiring robust transistors that can handle medium power and high voltage simultaneously.
- Pulse amplification stages in radar and communication equipment benefiting from the transistor??s fast switching capabilities.
- Power regulation and drive circuits in harsh environmental conditions, leveraging the device??s hermetic packaging and temperature tolerance.
JANTX2N3500U4-Transistor Advantages vs Typical Alternatives
This transistor excels in environments demanding high voltage and current handling combined with rugged reliability. Its hermetic metal can package offers superior protection compared to plastic-encapsulated alternatives, enhancing longevity and performance stability. The wide temperature operating range and high power dissipation capability make it ideal for military and aerospace sectors where failure is not an option. Overall, it delivers enhanced robustness, consistent gain, and dependable switching, outperforming many generic high-voltage BJTs.
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JANTX2N3500U4-Transistor Brand Info
The JANTX2N3500U4 is a JEDEC-standard transistor originally manufactured to meet stringent military specifications. This device is part of the JANTX series, widely recognized for its ruggedized construction and reliable performance in critical applications. Historically produced by major semiconductor manufacturers specializing in high-reliability components, it adheres to quality standards for aerospace and defense electronics. The brand??s commitment to durability and precision makes this transistor a trusted choice for engineers requiring dependable semiconductor solutions.
FAQ
What is the maximum collector-emitter voltage rating for this transistor?
The maximum collector-emitter voltage (VCEO) rating is 300 V. This rating defines the highest voltage the transistor can
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