JAN2N3499U4-Transistor NPN High-Power Amplifier in TO-3P Package by ON Semiconductor

  • This transistor amplifies electrical signals to improve circuit performance and enable precise control.
  • Its voltage rating supports stable operation under varying electrical loads, ensuring consistent functionality.
  • The compact package design reduces board space, facilitating efficient layout in dense electronic assemblies.
  • Ideal for switching applications, it enhances response time and energy efficiency in power management circuits.
  • Manufactured with quality controls that ensure durability and reliable operation over extended use.
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JAN2N3499U4-Transistor Overview

The JAN2N3499U4-Transistor is a high-performance NPN bipolar junction transistor designed for industrial and military applications requiring stringent reliability and durability. Featuring a robust collector-emitter voltage rating and moderate power dissipation capabilities, this transistor supports medium to high current operations with low leakage and stable gain characteristics. Its construction adheres to JAN (Joint Army-Navy) military standards, ensuring consistent performance under harsh environmental conditions. The device is suitable for switching, amplification, and signal processing in rugged electronic systems. For more detailed technical support and sourcing, visit the IC Manufacturer website.

JAN2N3499U4-Transistor Technical Specifications

Parameter Value Unit
Collector-Emitter Voltage (V_CEO) 100 V
Collector-Base Voltage (V_CBO) 120 V
Emitter-Base Voltage (V_EBO) 5 V
Collector Current (I_C) 1.5 A
Power Dissipation (P_D) 20 W
DC Current Gain (h_FE) 40 to 160 ??
Transition Frequency (f_T) 5 MHz
Operating Junction Temperature (T_J) -65 to +200 ??C

JAN2N3499U4-Transistor Key Features

  • High voltage handling capability: Supports up to 100 V collector-emitter voltage, enabling use in medium voltage circuits without risk of breakdown.
  • Wide operating temperature range: Functionality from -65??C to +200??C ensures reliable operation in extreme environments, critical for aerospace and military electronics.
  • Robust power dissipation: With a 20 W power rating, the transistor can handle significant power loads, facilitating high current switching and amplification tasks.
  • Military-grade quality: Compliance with JAN standards guarantees enhanced durability and consistency under shock, vibration, and thermal stress.

Typical Applications

  • Power amplification stages in communication equipment where linearity and reliability under harsh conditions are essential for signal integrity and system uptime.
  • Switching elements in industrial control systems requiring robust components to manage moderate power loads safely.
  • High-reliability aerospace electronics that demand components capable of withstanding wide temperature swings and mechanical stress.
  • Military-grade electronic assemblies where long-term stability and stringent quality certifications are mandatory for mission-critical operations.

JAN2N3499U4-Transistor Advantages vs Typical Alternatives

This transistor excels in maintaining stable gain and handling higher voltages compared to many commercial-grade transistors. Its military-standard certification delivers superior reliability and durability, minimizing failure rates in demanding environments. Enhanced thermal tolerance and power dissipation capabilities provide engineers with a versatile solution for applications requiring both endurance and performance, making it a preferred choice over typical alternatives lacking such stringent qualifications.

JAN2N3499U4-Transistor Brand Info

The JAN2N3499U4 is manufactured under strict Joint Army-Navy (JAN) specifications, historically overseen by defense contractors and semiconductor manufacturers specializing in military-grade components. Devices bearing the JAN prefix are recognized for their rigorous testing, enhanced quality controls, and reliability standards suited for defense and aerospace applications. This transistor model is commonly sourced from reputable suppliers adhering to MIL-PRF-19500 standards, ensuring consistent performance and traceability in critical electronic systems.

FAQ

What is the maximum voltage rating for this transistor?

The maximum collector-emitter voltage rating is 100 V, enabling the transistor to operate safely in circuits requiring medium voltage tolerance without risk of breakdown.

Can this transistor operate in extreme temperature environments?

Yes, it is rated for operation between -65??C and +200??C, making it suitable for applications exposed to harsh thermal conditions such as aerospace and military electronics.

What is the typical current the transistor can handle continuously?

This transistor supports a continuous collector current of up to 1.5 A, allowing it to manage moderate current loads in switching

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