JANTXV2N3439U4-Transistor High-Speed Switching NPN Transistor in TO-39 Package

JANTXV2N3439U4-Transistor Overview

The JANTXV2N3439U4 transistor is a high-performance bipolar junction transistor (BJT) designed for industrial and military-grade applications requiring robust switching and amplification capabilities. Featuring a ruggedized construction, this transistor supports high voltage and current operations with enhanced stability and reliability under harsh environmental conditions. It is optimized for power amplification and switching circuits where durability and precision are critical. Engineered for long-term operational stability, this device is ideal for use in demanding aerospace, defense, and industrial control systems. For detailed sourcing and specifications, visit IC Manufacturer.

JANTXV2N3439U4-Transistor Technical Specifications

JANTXV2N3439U4-Transistor Key Features

• High voltage rating up to 300 V: Enables reliable operation in power switching and amplification circuits requiring elevated voltage withstand.
• Collector current capacity of 8 A: Supports substantial load currents for demanding industrial applications, improving overall system robustness.
• Wide DC current gain range (40?C160): Provides flexibility in circuit design for optimized amplification and switching performance.
• Robust metal TO-39 package: Enhances thermal dissipation and mechanical durability, critical for military and aerospace environments.

Typical Applications

• Power amplification in industrial control systems, where high reliability and stable performance under variable load conditions are essential.
• Switching circuits in aerospace electronics requiring ruggedized components capable of withstanding extreme temperatures and mechanical stress.
• Military-grade signal amplification and processing applications that demand long-term durability and consistency.
• General-purpose medium-power linear amplification in harsh environments, including instrumentation and test equipment.

JANTXV2N3439U4-Transistor Advantages vs Typical Alternatives

This transistor offers superior voltage and current handling capabilities compared to typical BJTs in similar form factors. Its broad DC current gain range allows engineers to tailor the device for precise amplification needs. The metal TO-39 package provides enhanced thermal management and mechanical protection, making it more reliable in high-stress and high-temperature scenarios than many plastic-packaged alternatives. These factors combine to deliver a robust solution for industrial and military applications requiring consistent performance and longevity.

JANTXV2N3439U4-Transistor Brand Info

The JANTXV2N3439U4 is a JEDEC registered transistor type produced under stringent military and industrial quality standards. It is commonly associated with manufacturers specializing in high-reliability discrete semiconductor components meeting JAN (Joint Army-Navy) specifications. This ensures compliance with rigorous testing protocols for temperature range, vibration, and electrical performance. The device is widely trusted in defense, aerospace, and industrial sectors where certified quality and traceability are paramount.

FAQ

What is the maximum operating voltage of this transistor?

The device supports a maximum collector-emitter voltage of 300 V, making it suitable for applications requiring high-voltage switching and amplification.

Can this transistor handle