JANSM2N3439UA-Transistor NPN Amplifier Transistor in TO-18 Metal Can Package

  • This transistor amplifies or switches electronic signals, enabling efficient control in circuits.
  • Its maximum voltage rating ensures stable operation under varying electrical loads.
  • The compact package design supports space-saving layouts on densely populated circuit boards.
  • Ideal for use in power regulation modules, enhancing energy management in electronic devices.
  • Manufactured to meet industry reliability standards, ensuring consistent performance over time.
Microchip Technology-logo
产品上方询盘

JANSM2N3439UA-Transistor Overview

The JANSM2N3439UA transistor is a high-performance NPN bipolar junction transistor designed for robust switching and amplification tasks in industrial and commercial electronics. With a collector-emitter voltage rating suitable for medium to high power applications, it delivers reliable operation under demanding conditions. This transistor’s construction supports efficient current gain and power dissipation, making it suitable for use in power regulation, audio amplification, and driver circuits. Engineers and sourcing specialists will find this device advantageous for applications requiring dependable switching performance and thermal stability. For more detailed specifications and sourcing options, visit IC Manufacturer.

JANSM2N3439UA-Transistor Technical Specifications

ParameterValueUnit
Collector-Emitter Voltage (VCEO)160V
Collector-Base Voltage (VCBO)200V
Emitter-Base Voltage (VEBO)5V
Collector Current (IC)10A
Gain Bandwidth Product (fT)30MHz
DC Current Gain (hFE)15?C70
Power Dissipation (PD)115W
Junction Temperature (Tj)200??C

JANSM2N3439UA-Transistor Key Features

  • High voltage blocking capability: Supports collector-emitter voltages up to 160 V, enabling use in medium-to-high voltage circuits with enhanced safety margins.
  • Robust collector current rating: Handles continuous currents up to 10 A, allowing reliable operation in power switching and amplification applications.
  • Wide DC current gain range: Provides flexible gain between 15 and 70, optimizing performance for various signal amplification requirements.
  • Thermal endurance: Rated for junction temperatures up to 200??C, ensuring stable performance in harsh thermal environments.

Typical Applications

  • Power amplifiers in audio and industrial equipment, where high current and voltage handling improve output efficiency and signal fidelity.
  • Switching regulators and power supply circuits requiring reliable transistor switching under load for stable voltage control.
  • Motor control circuits where robust current capability and voltage tolerance ensure dependable operation in dynamic load conditions.
  • General-purpose amplification in analog circuits that demand consistent gain and thermal resilience for extended service life.

JANSM2N3439UA-Transistor Advantages vs Typical Alternatives

This transistor offers a superior combination of high voltage tolerance and strong current handling compared to many generic NPN alternatives. Its broad DC current gain range provides design flexibility for both switching and amplification tasks. The elevated maximum junction temperature enhances reliability under demanding thermal conditions, making it well-suited for industrial applications where long-term stability and performance consistency are critical.

JANSM2N3439UA-Transistor Brand Info

The JANSM2N3439UA is a military-grade transistor variant of the standard 2N3439 NPN transistor, produced under stringent quality controls for defense and aerospace markets. Manufactured by a recognized semiconductor supplier, it adheres to JAN (Joint Army-Navy) specifications ensuring enhanced durability, reliability, and performance in harsh environments. This transistor is specifically tailored for applications requiring ruggedness and compliance with military standards, making it a trusted choice for engineers designing mission-critical circuits.

FAQ

What voltage levels can the JANSM2N3439UA transistor safely handle?

This transistor is rated to withstand a maximum collector-emitter voltage of 160 V, collector-base voltage of 200 V, and emitter

Application

, ,

Save cost and time

Fast global delivery

Original parts guaranteed

Expert after-sale support

Looking for a Better Price?