JAN2N657S-Transistor Overview
The JAN2N657S transistor is a high-performance NPN silicon planar transistor designed for demanding industrial and military applications. It offers robust switching and amplification capabilities, ensuring reliable operation in harsh environments. With its stringent JAN (Joint Army-Navy) military standard certification, this transistor guarantees enhanced durability and consistent electrical characteristics. Ideal for power amplification and general-purpose switching, it delivers stable performance across a wide temperature range. Sourcing specialists and design engineers benefit from its proven reliability and adherence to strict quality controls, making it a trusted component in critical systems. Discover more at IC Manufacturer.
JAN2N657S-Transistor Technical Specifications
| Parameter | Value |
|---|---|
| Transistor Type | NPN Silicon Planar |
| Collector-Emitter Voltage (VCEO) | 80 V |
| Collector Current (IC) | 10 A (Continuous) |
| Power Dissipation (Ptot) | 115 W |
| DC Current Gain (hFE) | 30 to 70 |
| Transition Frequency (fT) | 3 MHz (Typ.) |
| Operating Junction Temperature | -65??C to +200??C |
| Package Type | TO-3 Metal Can |
| Base-Emitter Voltage (VBE(on)) | 2.0 V (Max) |
JAN2N657S-Transistor Key Features
- High current capability: Supports up to 10 A continuous collector current, enabling robust power amplification for demanding loads.
- Wide voltage rating: With an 80 V collector-emitter rating, it accommodates a broad range of industrial voltage requirements, enhancing design flexibility.
- Military-grade reliability: Complies with JAN standards, ensuring consistent performance under extreme temperature and environmental conditions.
- TO-3 packaging: Provides excellent heat dissipation and mechanical durability, crucial for high-power applications.
Typical Applications
- Power amplification circuits in industrial and aerospace sectors requiring high current and voltage handling with reliable performance.
- Switching regulators and power supplies where robust transistor switching and thermal management are critical.
- Military electronic systems demanding components that meet stringent quality and environmental standards.
- High-power audio amplifiers that benefit from stable gain and thermal resilience under continuous load conditions.
JAN2N657S-Transistor Advantages vs Typical Alternatives
This transistor offers superior current handling and thermal stability compared to typical alternatives, making it ideal for high-power, high-reliability applications. Its military-grade JAN certification ensures rigorous quality and environmental resilience not commonly found in commercial equivalents. The robust TO-3 metal can package enhances heat dissipation and mechanical protection, contributing to longer operational life and consistent performance under stress.
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JAN2N657S-Transistor Brand Info
The JAN2N657S is a product historically manufactured under Joint Army-Navy (JAN) military standards, typically produced by established semiconductor manufacturers known for defense-grade components. These transistors are commonly supplied by reputable brands specializing in military and aerospace-grade semiconductor devices, ensuring compliance with MIL-PRF-19500 standards. The JAN prefix denotes the device??s qualification for military applications, highlighting its reliability and quality control in critical defense and industrial markets.
FAQ
What is the maximum collector current rating for this transistor?
The maximum continuous collector current for this transistor is 10 amperes. This high current rating supports demanding power amplification and switching applications requiring significant load driving capability.
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What package type does the transistor come in, and how does it affect performance?
This transistor is housed in a TO-3 metal can package, which offers excellent thermal conductivity and mechanical strength. This packaging enhances heat dissipation, allowing the device to operate reliably at high power levels and in harsh environments.
Can this transistor operate at elevated temperatures?
Yes, the transistor supports a wide operating junction temperature range from -65??C up to +200??C, making it suitable for use in extreme temperature environments often encountered in military and industrial applications.







