The JANTXV2N3507AU4 is a high-voltage, high-current NPN bipolar junction transistor designed for rugged industrial and military applications. It offers reliable performance with a collector-emitter voltage rating of 100 V and a collector current capacity of 8 A, making it suitable for demanding power amplification and switching tasks. The transistor??s robust construction ensures stable operation under elevated temperatures and harsh environments. Its complementary features and sturdy electrical characteristics enable engineers and sourcing specialists to integrate this component into power control, amplifier circuits, and industrial automation systems with confidence. For detailed component sourcing and technical support, visit IC Manufacturer.
High voltage tolerance: With a collector-emitter voltage of 100 V, it supports high-power switching applications, enabling reliable operation in demanding industrial circuits.
Elevated current handling: Rated for continuous collector current up to 8 A, it ensures robust power amplification and minimal thermal stress during heavy loads.
Wide operating temperature range: Functional from -65??C to 200??C, this transistor maintains performance under extreme thermal conditions, enhancing system reliability.
Enhanced gain stability: A DC current gain range of 20 to 70 ensures predictable amplification, crucial for precision control in analog and switching circuits.
Typical Applications
High-power linear and switching amplifiers in industrial automation systems where stability and durability are critical.
Power control circuits requiring reliable high-voltage transistors for switching loads up to 8 A.
Military and aerospace electronics demanding components that withstand wide temperature ranges and harsh environmental conditions.
Motor driver circuits in industrial equipment leveraging the transistor??s capability for sustained high-current operation.
JANTXV2N3507AU4-Transistor Advantages vs Typical Alternatives
This transistor offers significant advantages over typical alternatives by combining high voltage and current ratings with a broad operating temperature range. Its robust power dissipation capability and stable gain profile improve reliability and accuracy in power amplification and switching roles. These attributes make it a preferred choice where long-term durability and stable performance under thermal and electrical stress are essential, enhancing system resilience and integration efficiency.
The JANTXV2N3507AU4 transistor conforms to stringent military and industrial standards, typically manufactured by established semiconductor suppliers specializing in high-reliability discrete components. Its JAN (Joint Army-Navy) designation indicates compliance with military-grade specifications for quality and performance. These transistors are produced to meet rigorous testing and certification requirements, ensuring suitability for critical defense and aerospace applications where failure is not an option. The product is part of a trusted portfolio aimed at engineers demanding dependable and long-lasting transistor solutions.
