JAN2N3507U4-Transistor PNP Power Amplifier in TO-66 Metal Can Package by ON Semiconductor

  • This transistor controls current flow efficiently, enabling precise amplification or switching in circuits.
  • It supports high voltage operation, ensuring stable performance in demanding electronic environments.
  • The compact package reduces board space, facilitating integration in tight or portable device layouts.
  • Ideal for power regulation in automotive or industrial applications, enhancing system reliability and control.
  • Manufactured to meet rigorous quality standards, offering consistent performance over extended use.
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JAN2N3507U4-Transistor Overview

The JAN2N3507U4 is a high-performance PNP bipolar junction transistor optimized for industrial and military-grade applications. Designed for robust switching and amplification tasks, this transistor offers reliable operation under demanding conditions, including elevated temperatures and high voltage stress. Its complementary structure makes it ideal for use in amplifier circuits, power regulation, and signal processing modules. With a focus on durability and precision, the JAN2N3507U4 is a trusted choice for engineers requiring consistent, high-quality transistor performance. For more detailed information and support, visit the IC Manufacturer website.

JAN2N3507U4-Transistor Technical Specifications

Parameter Specification
Transistor Type PNP Bipolar Junction Transistor
Collector-Emitter Voltage (Vceo) 60 V
Collector Current (Ic) 2 A (Continuous)
Power Dissipation (Pd) 30 W (at 25??C)
DC Current Gain (hFE) 20 to 70 (at Ic=0.5A)
Transition Frequency (fT) 3 MHz (typical)
Junction Temperature (Tj) -65??C to +200??C
Package Type TO-66 Metal Can

JAN2N3507U4-Transistor Key Features

  • High voltage tolerance: Supports collector-emitter voltages up to 60 V, enabling use in power regulation and switching circuits requiring robust voltage handling.
  • Strong current capability: Continuous collector current rating of 2 A allows effective control of moderate power loads without significant thermal stress.
  • Wide operating temperature range: Functional from -65??C up to +200??C, making it suitable for harsh military and industrial environments.
  • Reliable metal TO-66 package: Enhances heat dissipation and mechanical durability, ensuring long-term transistor stability and reliability.

Typical Applications

  • Power amplifier circuits where stable gain and high current handling are required for audio or signal amplification tasks.
  • Switching regulators that manage voltage and current efficiently in power supply designs.
  • Industrial control systems requiring temperature-resilient transistors for reliable performance under variable environmental conditions.
  • Military and aerospace electronic systems demanding components that meet stringent quality and durability standards.

JAN2N3507U4-Transistor Advantages vs Typical Alternatives

This transistor offers enhanced durability with its wide temperature range and metal can packaging, outperforming many plastic-encapsulated alternatives. Its higher collector current and voltage ratings provide increased power handling and reliability in demanding circuits. The consistent DC gain and frequency response ensure stable performance, making it a superior choice for precision industrial and military applications where sensitivity and operational accuracy are critical.

JAN2N3507U4-Transistor Brand Info

The JAN2N3507U4 is a product historically associated with JEDEC-standard military-grade transistors, often manufactured by reputable semiconductor companies specializing in high-reliability components. These transistors conform to stringent JAN (Joint Army-Navy) specifications, guaranteeing consistent quality and performance for defense and aerospace sectors. The metal TO-66 package and established electrical characteristics reflect the brand??s commitment to robust, long-lasting semiconductor solutions suited for critical industrial applications.

FAQ

What is the maximum voltage this transistor can handle?

The maximum collector-emitter voltage (Vceo) for this transistor is 60 volts, allowing it to operate safely in circuits with moderately high voltage requirements without breakdown.

Can this transistor be used in high-temperature environments?

Yes, it is rated for operation from -65??C up to +200??C junction temperature, making it suitable for high-temperature applications typical in industrial and military settings.

What type of package does this transistor come in?

This device is housed in a TO-66 metal can package, which provides superior thermal conductivity and mechanical durability compared to standard plastic packages

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