JANTXV2N3440UA-Transistor Overview
The JANTXV2N3440UA is a high-performance NPN bipolar junction transistor designed for demanding military and aerospace applications. Built to meet stringent JAN (Joint Army-Navy) standards, this transistor ensures exceptional reliability and ruggedness under harsh environmental conditions. With a voltage rating of 250 V and a collector current capacity of up to 10 A, it supports high-power switching and amplification tasks. The device features low saturation voltage and high gain, making it suitable for power amplification and switching in critical systems. Engineers and sourcing specialists rely on this transistor for robust performance where long-term stability and military-grade compliance are essential. More details are available at IC Manufacturer.
JANTXV2N3440UA-Transistor Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Transistor Type | NPN | |
| Collector-Emitter Voltage (Vceo) | 250 | V |
| Collector Current (Ic) | 10 | A |
| Gain Bandwidth Product (fT) | 10 | MHz |
| Power Dissipation (Pd) | 40 | W |
| DC Current Gain (hFE) | 20 to 70 | |
| Junction Temperature (Tj) | +200 | ??C |
| Package Type | TO-3 |
JANTXV2N3440UA-Transistor Key Features
- High voltage rating: Supports up to 250 V collector-emitter voltage, enabling use in high-voltage switching circuits.
- Robust current capacity: Handles continuous collector currents up to 10 A, ideal for power amplification in demanding environments.
- Military-grade reliability: Meets JANTXV qualification, ensuring performance under extreme temperature and mechanical stress.
- Wide operating temperature range: Junction temperatures up to +200??C permit operation in harsh thermal conditions.
Typical Applications
- Power switching and amplification in military and aerospace communication systems requiring high reliability and ruggedness.
- High-voltage amplifier stages where stable gain and current handling are critical.
- Industrial control systems exposed to extreme temperature or mechanical stress.
- Military-grade power regulation circuits demanding long-term stability and durability.
JANTXV2N3440UA-Transistor Advantages vs Typical Alternatives
This transistor offers superior reliability due to its JANTXV certification, distinguishing it from commercial-grade alternatives. Its high collector voltage and current ratings enable handling of demanding power levels with low saturation losses. The ability to operate at elevated temperatures up to 200??C ensures stable performance in harsh environments. These advantages make it a preferred choice for military and aerospace engineers seeking rugged, long-lasting transistor solutions.
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JANTXV2N3440UA-Transistor Brand Info
The JANTXV2N3440UA is manufactured under strict military standards by leading semiconductor suppliers specializing in defense-grade components. The ??JAN?? prefix indicates compliance with Joint Army-Navy specifications, guaranteeing rigorous screening and qualification processes. Typically housed in a TO-3 metal can package, this transistor is trusted for critical systems where reliability and performance cannot be compromised. It is widely recognized in the industry for its proven track record in aerospace, military, and industrial power applications.
FAQ
What does the JANTXV designation mean for this transistor?
The JANTXV prefix signifies that the transistor meets the Joint Army-Navy ??TX?? qualification standards for high-reliability military components. This includes rigorous screening, testing for extreme temperature ranges, mechanical shock, and long-term reliability, ensuring suitability for critical defense and aerospace applications.
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What is the maximum operating temperature for this transistor?
This transistor supports a maximum junction temperature of +200??C, enabling operation in high-temperature environments typically encountered in aerospace and industrial control systems.
Which package type does this transistor use?
The device is housed in a TO-3 metal can package, which provides excellent thermal dissipation and mechanical robustness for high-power applications.







