JAN2N5415UA Transistor – PNP Power Transistor in TO-220 Package by ON Semiconductor

JAN2N5415UA-Transistor Overview

The JAN2N5415UA is a high-voltage, high-current PNP bipolar junction transistor designed for robust power switching and amplification applications. Engineered to operate with a collector-emitter voltage rating of up to 100V and a collector current capacity of 4A, it supports demanding industrial and military-grade environments requiring reliable performance under stress. This transistor??s rugged construction and precise electrical parameters make it ideal for use in power regulators, motor controllers, and amplifier circuits. For sourcing quality semiconductor components with trusted specifications, visit the IC Manufacturer website.

JAN2N5415UA-Transistor Technical Specifications

JAN2N5415UA-Transistor Key Features

• High voltage rating: Supports up to 100V collector-emitter voltage, ensuring reliable operation in high-voltage circuits without breakdown.
• Robust current handling: Capability of 4A collector current suits power control applications requiring substantial current flow.
• Wide DC current gain range: Gain between 15 and 75 provides design flexibility for amplification and switching purposes.
• Durable TO-3 package: Metal can housing offers excellent thermal conductivity and mechanical protection, enhancing reliability in harsh environments.

Typical Applications

• Power amplifiers in audio and industrial frequency ranges, where high current and voltage handling are critical for signal fidelity and robustness.
• Motor control circuits requiring rugged transistors for managing switching loads and maintaining efficiency under variable current demands.
• Voltage regulators used in industrial power supplies, benefiting from the transistor??s stable gain and power dissipation capabilities.
• General-purpose switching in military and aerospace electronics, where component reliability and strict specification adherence are mandatory.

JAN2N5415UA-Transistor Advantages vs Typical Alternatives

This transistor stands out by combining a high collector-emitter voltage rating with significant current capacity, making it superior for power-intensive applications compared to lower-rated alternatives. Its metal TO-3 package enhances heat dissipation and mechanical durability, ensuring longer operational life and stable performance under thermal stress. These factors make it a dependable choice for engineers seeking reliable, high-performance bipolar transistors in industrial and military-grade designs.

JAN2N5415UA-Transistor Brand Info

The JAN2N5415UA transistor belongs to the 2N5415 series, originally manufactured under stringent military and industrial standards, often by established semiconductor manufacturers known for high-reliability discrete components. The “JAN” prefix indicates compliance with Joint Army-Navy specifications, reflecting the device??s suitability for defense and aerospace applications. Typically available from legacy semiconductor suppliers and distributors specializing in MIL-grade parts, this transistor is recognized for its robustness, consistent quality, and long lifecycle support in demanding electronic systems.

FAQ

What is the maximum voltage rating of this transistor?

The maximum collector-emitter voltage rating is 100 volts, allowing the transistor to be used safely in circuits with high voltage levels without risk of breakdown.

Can this transistor handle high current loads?

Yes, it supports a collector current of up to 4 amperes, making it suitable for applications requiring substantial current handling such as power amplifiers and motor drivers.