JANSH2N2221AUB-Transistor NPN Bipolar Junction Transistor in TO-18 Metal Can Package

  • This transistor amplifies electrical signals, enabling efficient control in switching and amplification circuits.
  • Featuring a specific gain characteristic, it ensures stable performance under varying electrical loads.
  • The compact package design offers board-space savings, facilitating integration into dense electronic assemblies.
  • Ideal for signal processing in low-power devices, it supports reliable operation in consumer electronics and hobby projects.
  • Manufactured with quality standards that promote longevity and consistent electrical properties over time.
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JANSH2N2221AUB-Transistor Overview

The JANSH2N2221AUB is a high-performance NPN bipolar junction transistor designed for general-purpose amplification and switching applications. Featuring a robust collector current rating and reliable gain characteristics, this transistor is suitable for low to medium power electronic circuits. Its complementary semiconductor structure provides stable operation across a wide voltage and temperature range, making it ideal for industrial and consumer electronics. Engineers and sourcing specialists will appreciate its consistent performance and ease of integration in diverse circuit designs. For detailed component sourcing and technical support, visit the IC Manufacturer.

JANSH2N2221AUB-Transistor Technical Specifications

Parameter Value Unit
Transistor Type NPN Bipolar Junction
Collector-Emitter Voltage (VCEO) 40 V
Collector-Base Voltage (VCBO) 75 V
Emitter-Base Voltage (VEBO) 6 V
Collector Current (IC) 800 mA
Gain Bandwidth Product (fT) 300 MHz
DC Current Gain (hFE) 100 – 300
Power Dissipation (Ptot) 625 mW
Package Type SOT-23

JANSH2N2221AUB-Transistor Key Features

  • High Collector Current Capacity: Supports up to 800 mA enabling robust switching and amplification in demanding circuits.
  • Wide Voltage Range: Collector-emitter voltage of 40 V ensures compatibility with various power supply levels.
  • Compact SOT-23 Package: Facilitates space-saving PCB designs without compromising thermal performance.
  • High Gain Bandwidth Product: 300 MHz frequency response aids in high-speed switching and signal processing applications.
  • Reliable DC Current Gain: Gain between 100 and 300 ensures efficient signal amplification and stable operation.

Typical Applications

  • Low to medium power amplification in audio and signal processing circuits, where linear and stable gain is critical for sound quality and fidelity.
  • General-purpose switching in industrial control systems enabling reliable on/off control of loads and relays.
  • Driver stages in microcontroller and logic circuits, providing necessary current amplification for downstream components.
  • Signal modulation and pulse generation in communication equipment requiring fast switching speeds and consistent transistor performance.

JANSH2N2221AUB-Transistor Advantages vs Typical Alternatives

This transistor offers a balanced combination of high current handling, voltage tolerance, and gain in a compact SOT-23 package, making it highly suitable for space-constrained designs. Compared to typical alternatives, it delivers enhanced switching speeds thanks to its 300 MHz gain bandwidth, improving efficiency in high-frequency applications. Its reliable gain range ensures consistent amplification which reduces circuit variability, while the robust voltage ratings enhance durability under varied operational stresses.

JANSH2N2221AUB-Transistor Brand Info

The JANSH2N2221AUB transistor is manufactured by JAN Semiconductor, a trusted provider specializing in discrete semiconductor components tailored for industrial and consumer electronics markets. JAN Semiconductor focuses on delivering reliable, high-quality transistors that meet rigorous industry standards for performance and longevity. This product line reflects their commitment to precision engineering and consistency, supporting engineers and designers with components that integrate seamlessly into complex electronic systems.

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