JANSM2N2907AUA-Transistor PNP Bipolar Junction Transistor in TO-18 Metal Can Package

  • This transistor amplifies or switches electronic signals, enabling efficient circuit control and modulation.
  • Its voltage and current ratings ensure stable operation under typical load conditions, supporting circuit reliability.
  • The compact package design offers board-space savings, facilitating integration into densely packed electronic assemblies.
  • Ideal for signal amplification in audio or switching tasks in power management, enhancing device responsiveness.
  • Manufactured under strict quality standards, it delivers consistent performance and long-term operational stability.
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JANSM2N2907AUA-Transistor Overview

The JANSM2N2907AUA is a robust PNP bipolar junction transistor designed for medium power amplification and switching applications. Featuring a maximum collector current of 600 mA and a collector-emitter voltage rating of 60 V, this transistor delivers reliable performance in industrial control circuits and general-purpose amplification. Its complementary NPN counterpart and standardized TO-92A package make it a versatile choice for engineers seeking consistent gain and switching speed. Manufactured to stringent military standards, this device ensures enhanced durability and stability across demanding environments. For detailed sourcing and technical support, visit IC Manufacturer.

JANSM2N2907AUA-Transistor Technical Specifications

Parameter Specification
Type PNP Bipolar Junction Transistor
Collector-Emitter Voltage (VCEO) 60 V
Collector-Base Voltage (VCBO) 60 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current (IC) 600 mA
DC Current Gain (hFE) 100 to 300 (at IC=150 mA)
Transition Frequency (fT) 100 MHz (typical)
Power Dissipation (Ptot) 625 mW
Package TO-92A

JANSM2N2907AUA-Transistor Key Features

  • High current capacity: Supports collector current up to 600 mA, enabling efficient switching and amplification in medium power circuits.
  • Voltage tolerance: Withstands up to 60 V collector-emitter voltage, suitable for a broad range of industrial applications requiring robust voltage handling.
  • Consistent gain: Provides stable DC current gain (hFE) between 100 and 300, ensuring predictable amplification performance.
  • Fast switching speed: Transition frequency around 100 MHz facilitates responsive signal processing in switching applications.
  • Industry-standard package: Compact TO-92A housing simplifies PCB design and integration into existing systems.
  • Reliable thermal performance: Supports up to 625 mW power dissipation, maintaining longevity under moderate thermal stress.
  • Military-grade quality: Manufactured to JAN (Joint Army-Navy) standards, offering enhanced durability and reliability in harsh environments.

Typical Applications

  • General purpose amplification in audio and signal processing circuits, where medium current and voltage handling is required for clean and efficient amplification.
  • Switching applications in industrial control systems, including relay driving and motor control interfaces.
  • Complementary pairing with NPN devices in push-pull amplifier stages and complementary output configurations.
  • Use in test equipment and instrumentation that demand reliable, stable transistor performance under varying environmental conditions.

JANSM2N2907AUA-Transistor Advantages vs Typical Alternatives

This transistor offers superior reliability and consistent electrical characteristics compared to generic alternatives, especially due to its military-grade JAN qualification. Its enhanced voltage and current ratings provide greater margin for safety and durability in industrial environments. The stable gain and fast switching capabilities improve circuit efficiency and response times, making it a preferred choice for engineers prioritizing both performance and longevity.

JANSM2N2907AUA-Transistor Brand Info

The JANSM2N2907AUA is part of a product line adhering to the Joint Army-Navy (JAN) military standards, reflecting rigorous quality and reliability benchmarks. Typically supplied by manufacturers specializing in rugged semiconductor devices, this transistor is designed for critical applications requiring dependable operation under harsh conditions. The JAN prefix signifies compliance with strict defense specifications, ensuring suitability for aerospace,

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