JANSR2N2221AUA-Transistor NPN Bipolar Junction Transistor in TO-18 Metal Can Package

  • This transistor amplifies or switches electronic signals, enabling efficient control in circuits.
  • Its electrical parameters support stable performance under varying voltage conditions for consistent operation.
  • The compact package reduces board space, facilitating integration into dense or portable electronic designs.
  • Ideal for signal amplification in audio devices, enhancing sound clarity and responsiveness effectively.
  • Manufactured to meet rigorous quality standards, ensuring dependable function over extended use.
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JANSR2N2221AUA-Transistor Overview

The JANSR2N2221AUA transistor is a robust NPN bipolar junction transistor (BJT) designed for switching and amplification in industrial and commercial electronics. It supports collector currents up to 800mA and offers a maximum collector-emitter voltage of 40V, making it suitable for medium-power applications. With a hFE (DC current gain) typically ranging from 40 to 300, it provides reliable amplification performance. The device is optimized for low noise and high switching speed, ensuring efficient operation in control circuits and signal processing. The transistor is available in a TO-18 metal can package, which offers enhanced thermal dissipation and ruggedness. For sourcing and detailed technical data, visit IC Manufacturer.

JANSR2N2221AUA-Transistor Technical Specifications

Parameter Specification
Transistor Type NPN Bipolar Junction Transistor
Collector-Emitter Voltage (VCEO) 40 V
Collector-Base Voltage (VCBO) 75 V
Emitter-Base Voltage (VEBO) 6 V
Collector Current (IC) 800 mA
DC Current Gain (hFE) 40 to 300 (at IC = 150 mA)
Power Dissipation (PD) 625 mW
Transition Frequency (fT) 250 MHz (typical)
Package TO-18 Metal Can
Junction Temperature (TJ) +200 ??C max

JANSR2N2221AUA-Transistor Key Features

  • High current handling: Supports collector currents up to 800mA, enabling use in moderate power switching and amplification circuits.
  • Wide voltage ratings: Collector-emitter voltage of 40V and collector-base voltage of 75V provide flexibility for various industrial voltage environments.
  • Fast switching speed: Transition frequency around 250 MHz allows efficient high-frequency operation suitable for signal processing applications.
  • Rugged TO-18 packaging: Metal can package offers superior thermal performance and mechanical durability for harsh operating conditions.
  • Reliable gain range: DC current gain between 40 and 300 ensures consistent amplification with low noise characteristics.
  • High maximum junction temperature: Rated up to 200??C for improved reliability in elevated temperature environments.

Typical Applications

  • General-purpose switching and amplification in industrial control systems, enabling efficient signal routing and power management in automated environments.
  • Driver stages for relay or solenoid circuits where moderate currents and voltages are required.
  • Low-noise audio amplification circuits that demand stable gain and low distortion.
  • High-frequency switching applications such as oscillator circuits or pulse generation in communication devices.

JANSR2N2221AUA-Transistor Advantages vs Typical Alternatives

This transistor provides a balanced combination of current capacity, voltage tolerance, and switching speed that many alternatives cannot match simultaneously. Its metal can TO-18 package offers superior thermal dissipation and mechanical stability compared to plastic-encapsulated devices. The broad DC gain range ensures adaptability across amplification tasks, while the high maximum junction temperature supports reliable operation in demanding industrial environments. These attributes make it a preferred choice for engineers seeking dependable performance in switching and amplification applications.

JANSR2N2221AUA-Transistor Brand Info

The JANSR2N2221AUA is a JEDEC-standard transistor variant widely manufactured by multiple semiconductor vendors specializing in discrete bipolar transistors. Its designation follows the military and industrial grade qualification standards ensuring enhanced reliability and consistency. This device is commonly associated with reputable manufacturers who focus on delivering high-quality discrete components for industrial and aerospace applications. The transistor??s legacy is rooted in the classic 2N2221 transistor design, refined for improved thermal performance and ruggedness under the J

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