JANSD2N2221AUB-Transistor NPN Amplifier Transistor in TO-18 Metal Can Package

  • This transistor amplifies electrical signals, enabling efficient control in various electronic circuits.
  • It operates with a voltage rating suitable for standard switching and amplification tasks, ensuring stable performance.
  • The compact package design facilitates easy integration and saves valuable board space in tight layouts.
  • Ideal for use in low-power switching applications, it helps optimize circuit responsiveness and energy use.
  • Manufactured to meet industry reliability standards, it ensures consistent operation over extended periods.
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JANSD2N2221AUB-Transistor Overview

The JANSD2N2221AUB-Transistor is a robust NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. Featuring reliable gain characteristics and a maximum collector current of 800mA, it offers dependable performance in low to medium power circuits. This transistor??s versatility makes it suitable for industrial control, signal amplification, and driver stages. Its TO-92 package ensures easy integration into through-hole designs, while the device??s stable operation up to 40V collector-emitter voltage supports a wide range of electronic systems. Available from IC Manufacturer, this transistor delivers a balance of performance and cost-effectiveness for engineers and sourcing specialists.

JANSD2N2221AUB-Transistor Technical Specifications

ParameterSpecification
Transistor TypeNPN Bipolar Junction Transistor (BJT)
Collector-Emitter Voltage (VCEO)40 V
Collector-Base Voltage (VCBO)75 V
Emitter-Base Voltage (VEBO)6 V
Collector Current (IC)800 mA (max)
DC Current Gain (hFE)100 to 300 (typical)
Power Dissipation (Ptot)625 mW (max)
Transition Frequency (fT)300 MHz (typical)
Package TypeTO-92

JANSD2N2221AUB-Transistor Key Features

  • High collector current capability: Supports up to 800mA, enabling effective switching and amplification in medium power circuits.
  • Wide voltage ratings: With a collector-emitter voltage of 40V, it suits a variety of voltage domains without compromising reliability.
  • Consistent current gain: The hFE range of 100 to 300 ensures predictable amplification, enhancing circuit stability.
  • Fast switching speed: A transition frequency around 300 MHz facilitates high-frequency operation in signal processing applications.
  • Compact TO-92 package: Allows easy mounting and integration in through-hole PCB designs common in industrial electronics.
  • Robust power dissipation: 625 mW maximum power handling supports sustained operation under moderate thermal loads.

Typical Applications

  • General-purpose switching: Ideal for driving relays, lamps, and other loads in control circuits requiring moderate current handling.
  • Signal amplification: Suitable for low-noise amplifier stages in audio and sensor interface circuits within industrial equipment.
  • Digital logic interface: Functions as a level shifter or buffer transistor in microcontroller-based control systems.
  • Driver stages in power supplies: Efficiently controls the base current of larger power transistors in regulated power modules.

JANSD2N2221AUB-Transistor Advantages vs Typical Alternatives

This transistor offers a reliable balance of voltage, current, and gain characteristics that make it preferable over many low-power alternatives. Its high collector current rating and stable gain range deliver improved sensitivity and accuracy in switching and amplification. The fast transition frequency enhances integration in higher-speed circuits, while the TO-92 package ensures ease of use and replacement in existing designs. These features collectively support enhanced reliability and efficiency for industrial electronic applications.

JANSD2N2221AUB-Transistor Brand Info

The JANSD2N2221AUB-Transistor is manufactured under the JAN (Joint Army-Navy) military specification lineage, indicating stringent quality and reliability standards. This product is typically provided by manufacturers specializing in military-grade and industrial semiconductor devices. The transistor is designed to meet rigorous performance criteria for durability and consistent operation in harsh environments, making it a trusted choice

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