JAN2N1479-Transistor NPN Amplifier Transistor in TO-18 Metal Can Package by ON Semiconductor

  • Acts as a semiconductor device controlling current flow, enabling efficient signal amplification and switching.
  • Designed with a specified voltage rating, ensuring safe operation within electrical limits during use.
  • Features a compact package that supports board-space savings and simplifies circuit design integration.
  • Ideal for use in electronic circuits requiring reliable switching, improving overall device performance.
  • Manufactured to meet quality standards that enhance durability and consistent operation over time.
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JAN2N1479-Transistor Overview

The JAN2N1479 transistor is a high-performance NPN bipolar junction transistor designed for medium-power amplification and switching applications. It features a robust construction suitable for military and industrial environments, ensuring reliable operation under demanding conditions. With a maximum collector-emitter voltage of 100 V and a collector current rating of 2 A, this transistor supports efficient signal amplification and switching tasks. The device is housed in a TO-18 metal can package, providing excellent thermal conductivity and mechanical durability. Sourcing this transistor ensures consistent performance in precision analog circuits and rugged electronic systems. Available through IC Manufacturer, it is optimized for engineers requiring dependable semiconductor components.

JAN2N1479-Transistor Technical Specifications

Parameter Value
Transistor Type NPN Bipolar Junction Transistor
Collector-Emitter Voltage (V_CEO) 100 V
Collector-Base Voltage (V_CBO) 100 V
Emitter-Base Voltage (V_EBO) 5 V
Collector Current (I_C) 2 A Continuous
Power Dissipation (P_TOT) 30 W (at 25??C)
Transition Frequency (f_T) 70 MHz (typical)
DC Current Gain (h_FE) 40 to 160 (varies with test conditions)
Package TO-18 Metal Can

JAN2N1479-Transistor Key Features

  • High Voltage Capability: With a collector-emitter voltage rating of 100 V, it supports circuits requiring robust voltage handling without breakdown risks.
  • Medium Power Handling: Supports continuous collector currents up to 2 A, enabling efficient switching and amplification in moderate power applications.
  • Reliable Metal Can Package: The TO-18 package ensures superior thermal dissipation and mechanical stability, critical for high-reliability environments.
  • Good Frequency Response: Typical transition frequency of 70 MHz allows operation in RF and intermediate frequency stages, expanding application versatility.

Typical Applications

  • Signal amplification in audio and intermediate frequency circuits where medium power gain and voltage handling are essential.
  • Switching elements in power control circuits requiring reliable operation under elevated voltages and currents.
  • General-purpose amplification stages in industrial and military electronic equipment demanding rugged, dependable components.
  • Driver transistors in relay and solenoid control circuits, benefiting from the transistor??s robust current and voltage ratings.

JAN2N1479-Transistor Advantages vs Typical Alternatives

This transistor offers a balanced combination of voltage tolerance and current capacity that outperforms many low-power transistors, making it ideal for moderate power applications. Its metal can packaging provides enhanced thermal management and mechanical protection compared to plastic-encapsulated alternatives, improving reliability in harsh environments. The wide operating frequency range and stable gain characteristics give engineers precise control and integration flexibility, setting it apart in applications demanding both durability and performance.

JAN2N1479-Transistor Brand Info

The JAN2N1479 transistor is part of the JAN (Joint Army-Navy) series, originally standardized for military use with strict quality and reliability standards. These transistors are typically manufactured by established semiconductor producers specializing in defense-grade components. The “JAN” prefix denotes compliance with military specifications, ensuring ruggedness and long-term stability critical for aerospace, defense, and industrial applications. This device??s production adheres to rigorous testing protocols, delivering dependable performance for engineers sourcing components for mission-critical systems.

FAQ

What is the maximum collector current rating for this transistor?

The transistor supports a continuous collector current up to 2 amperes, which allows it to handle medium-power switching and amplification tasks effectively without thermal or electrical overstress under specified conditions.

Can this transistor operate at high frequencies?

Yes, the device has a typical transition frequency of 70 MHz, making it suitable for RF amplification and intermediate frequency stages, which require fast switching and signal integrity at moderate frequencies.

What packaging type is used for this transistor and why is it important?

This transistor is packaged in a TO-18 metal can, which offers superior thermal conductivity and mechanical robustness

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