JANTXV2N1890S-Transistor RF Power Transistor in TO-3 Package ?C NXP Semiconductors

  • This transistor amplifies electrical signals, enabling efficient control in various electronic circuits.
  • It supports high voltage operation, ensuring stable performance under demanding electrical conditions.
  • The compact package reduces board space, facilitating integration into dense circuit designs.
  • Ideal for switching applications, it enhances device responsiveness and energy management.
  • Manufactured to meet rigorous quality standards, it offers dependable long-term reliability.
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JANTXV2N1890S-Transistor Overview

The JANTXV2N1890S transistor is a high-reliability, silicon NPN bipolar junction transistor designed for military and aerospace applications requiring stringent quality standards. Constructed to meet JAN (Joint Army-Navy) specifications, it delivers stable performance under extreme environmental conditions, including wide temperature ranges and high radiation tolerance. This transistor offers dependable switching and amplification capabilities with a maximum collector current of 8A and a collector-emitter voltage rating suitable for demanding power control circuits. Engineered for ruggedness and long-term reliability, it is an ideal choice for defense electronics, high-reliability industrial systems, and harsh-environment applications. For more details, visit IC Manufacturer.

JANTXV2N1890S-Transistor Technical Specifications

Parameter Value
Transistor Type NPN Bipolar Junction
Collector-Emitter Voltage (Vceo) 90 V
Collector Current (Ic) 8 A
Gain Bandwidth Product (fT) 10 MHz (typical)
Power Dissipation (Pc) 75 W (max)
Junction Temperature Range -65??C to +200??C
Package Type TO-3 Metal Can
Collector-Base Voltage (Vcbo) 140 V
Emitter-Base Voltage (Vebo) 7 V

JANTXV2N1890S-Transistor Key Features

  • High current handling: Supports continuous collector currents up to 8A, enabling robust power switching in demanding circuits.
  • Wide voltage ratings: Collector-emitter voltage up to 90V ensures reliable operation in high-voltage environments.
  • Extended temperature range: Operational from -65??C to +200??C, suitable for extreme environmental conditions common in aerospace and military applications.
  • Rugged TO-3 package: Provides excellent thermal conduction and mechanical stability for enhanced reliability.

Typical Applications

  • Military and aerospace power amplification and switching circuits where reliability under extreme conditions is critical.
  • Industrial power control systems requiring high-current switching and voltage handling capabilities.
  • High-reliability electronic assemblies needing components qualified to JAN standards.
  • Robust driver stages in communication and radar equipment operating in harsh environments.

JANTXV2N1890S-Transistor Advantages vs Typical Alternatives

This transistor offers superior reliability and environmental tolerance compared to standard commercial-grade devices. Its high current and voltage ratings combined with military-grade certification ensure enhanced durability and consistent performance under harsh conditions. The robust TO-3 metal can package further improves thermal management and mechanical strength, providing a clear advantage for critical applications demanding long-term stability and precision switching.

JANTXV2N1890S-Transistor Brand Info

The JANTXV2N1890S transistor is manufactured to meet stringent Joint Army-Navy (JAN) standards, which certify components for use in defense and aerospace sectors. These standards ensure the device undergoes rigorous testing for electrical performance, mechanical integrity, and environmental resilience. Typically produced by leading semiconductor manufacturers specializing in military-grade components, this transistor is part of a trusted lineup designed to support mission-critical systems requiring uncompromising quality and proven reliability.

FAQ

What does the JAN designation mean for this transistor?

JAN stands for Joint Army-Navy, indicating that this transistor complies with military standards for reliability and quality. It undergoes extensive testing to ensure performance in harsh environments, including temperature extremes, vibration, and shock conditions.

What are the typical operating temperature ranges for this transistor?

The device is rated for operation between -65??C and +200??C, making it suitable for extreme environmental conditions often encountered in aerospace and defense applications.

Can this transistor handle high power dissipation in continuous operation?

Yes, it supports a maximum power dissipation of 75 watts, provided adequate heat sinking is used. The TO-3 package facilitates efficient thermal management to maintain safe junction temperatures during prolonged use.

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Is this transistor suitable for switching high voltages and currents?

Absolutely. With

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