JANSL2N3057A-Transistor NPN Power Transistor in TO-3 Package by JAN Semiconductor

  • This transistor amplifies electrical signals, enabling effective control of current in various circuits.
  • Its voltage rating supports stable operation under typical load conditions, ensuring consistent performance.
  • The compact package design offers board-space savings, facilitating integration into space-constrained devices.
  • Ideal for switching applications, it enhances efficiency in power management and signal modulation tasks.
  • Manufactured to meet quality standards, it provides reliable functionality and long-term operational stability.
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JANSL2N3057A-Transistor Overview

The JANSL2N3057A transistor is a high-power NPN bipolar junction transistor designed for robust switching and amplification applications. With its high collector-emitter voltage and current handling capabilities, it offers reliable performance in demanding industrial environments. This device features a complementary design to the 2N3055 transistor, making it suitable for use in power regulation, audio amplification, and motor control circuits. The rugged construction ensures durability and thermal stability under varying operating conditions. For engineers and sourcing specialists looking for a dependable power transistor, the IC Manufacturer provides this component with proven specifications and industry-standard packaging.

JANSL2N3057A-Transistor Technical Specifications

ParameterValueUnit
Collector-Emitter Voltage (VCEO)60V
Collector-Base Voltage (VCBO)100V
Emitter-Base Voltage (VEBO)7V
Collector Current (IC)15A
Power Dissipation (Ptot)115W
DC Current Gain (hFE)20?C70(typical)
Transition Frequency (fT)2.5MHz
Operating Junction Temperature (TJ)200??C

JANSL2N3057A-Transistor Key Features

  • High collector current capacity: Supports up to 15A, enabling use in high-power switching and amplification without performance degradation.
  • Robust voltage ratings: Withstands collector-emitter voltages up to 60V, ensuring reliable operation in medium voltage circuits.
  • Wide power dissipation range: Capable of dissipating 115W, allowing efficient thermal management in demanding applications.
  • Complementary to 2N3055: Facilitates circuit design with matched pairs for push-pull or complementary amplifier configurations.

Typical Applications

  • Power amplification in audio systems, providing reliable signal gain for medium to high power output stages.
  • Switching applications in power supplies and voltage regulators where high current and voltage handling are critical.
  • Motor control circuits requiring robust switching components capable of handling significant load currents.
  • Industrial automation systems where durability and thermal stability are essential for continuous operation.

JANSL2N3057A-Transistor Advantages vs Typical Alternatives

This transistor offers a superior combination of high current capacity, voltage tolerance, and power dissipation compared to many standard NPN transistors. Its complementary design to the 2N3055 enhances integration in push-pull amplifier circuits, improving efficiency and signal fidelity. The wide operating temperature range and rugged construction ensure reliability and extended service life, making it a preferred choice over typical alternatives in high-power, industrial-grade applications.

JANSL2N3057A-Transistor Brand Info

The JANSL2N3057A is a military-grade variant of the popular 2N3057 transistor, often manufactured by reputable semiconductor producers specializing in high-reliability components. It is designed to meet stringent quality and performance standards for industrial and defense applications. The JAN prefix indicates compliance with Joint Army-Navy (JAN) specifications, highlighting its ruggedness and suitability for harsh environments. This transistor is widely recognized for its dependable performance in power electronics and industrial control systems.

FAQ

What is the maximum collector current of this transistor?

The maximum collector current for this transistor is 15 amperes, allowing it to handle substantial load currents in power amplification and switching

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