JANSF2N3057A-Transistor NPN Power Transistor in TO-126 Package ?C JANS Brand

JANSF2N3057A-Transistor Overview

The JANSF2N3057A transistor is a high-power NPN bipolar junction transistor (BJT) designed for robust switching and amplification applications. With a collector-emitter voltage rating of 60V and a collector current capacity up to 10A, it offers reliable performance under demanding electrical loads. Its TO-3 metal can package ensures excellent thermal dissipation, making it suitable for industrial and power control environments. The device exhibits a DC current gain (hFE) ranging from 20 to 70, enabling efficient signal amplification. This transistor is a trusted solution for engineers requiring durability and consistent operation in power switching circuits. For additional product information and sourcing, visit IC Manufacturer.

JANSF2N3057A-Transistor Technical Specifications

JANSF2N3057A-Transistor Key Features

• High Collector Current Capacity: Supports continuous currents up to 10A, ensuring capability for heavy power switching and amplification tasks.
• Robust Voltage Ratings: Withstands collector-emitter voltages up to 60V and collector-base voltages up to 100V, providing versatility in various circuit designs.
• Efficient Thermal Management: The TO-3 metal can package offers superior heat dissipation, enhancing reliability and longevity under high power conditions.
• Stable DC Gain: Offers a dependable current gain range of 20 to 70, optimizing performance for signal amplification in industrial applications.

Typical Applications

• Industrial power switching circuits requiring high current handling and reliable operation under elevated thermal stress.
• Linear amplifiers in audio and control systems where moderate frequency response and power dissipation are critical.
• Motor control and relay driver circuits benefiting from robust voltage and current ratings.
• General-purpose amplification tasks in industrial electronics demanding durable transistor performance.

JANSF2N3057A-Transistor Advantages vs Typical Alternatives

This transistor stands out due to its high collector current rating and strong voltage withstand capabilities, making it more reliable than typical low-power BJTs. The TO-3 package enhances thermal efficiency, reducing the risk of overheating during continuous operation. Its stable gain ensures consistent amplification, improving circuit accuracy and sensitivity compared to alternatives with less defined gain ranges. Overall, it delivers a robust, dependable solution for demanding industrial power and amplification applications.

JANSF2N3057A-Transistor Brand Info

The JANSF2N3057A is a military-grade transistor variant originally produced by multiple semiconductor manufacturers adhering to strict JEDEC and JAN (Joint Army-Navy) standards. These standards ensure high reliability, extended temperature range operation, and rigorous quality controls suitable for defense and aerospace sectors. The ??JAN?? prefix signifies compliance with these military specifications, affirming the device??s suitability for critical industrial and defense applications requiring enhanced ruggedness and long-term stability.

FAQ

What is the maximum collector current supported by this transistor?

The transistor supports a maximum continuous collector current of 10 amperes, allowing it to handle heavy load currents in power switching and amplification circuits.

What package type is used for this device and why is it important?

This transistor uses a TO-3 metal can package, which is important for efficient heat dissipation and mechanical robustness,