The JAN2N3749-Transistor is a high-performance NPN bipolar junction transistor designed for medium power switching and amplification applications. Featuring a collector-emitter voltage rating of 100V and a continuous collector current of up to 200mA, it provides reliable operation in industrial and commercial environments. Its complementary transistor characteristics allow for efficient signal processing and amplification in low to moderate power circuits. The device??s robust design ensures dependable switching speed and thermal stability. Sourced from a trusted supplier, the JAN2N3749 is ideal for engineers seeking consistent performance in transistor applications. For more detailed technical support and sourcing options, visit IC Manufacturer.
JAN2N3749-Transistor Technical Specifications
Parameter
Specification
Type
NPN Bipolar Junction Transistor
Collector-Emitter Voltage (VCEO)
100 V
Collector-Base Voltage (VCBO)
100 V
Emitter-Base Voltage (VEBO)
5 V
Collector Current (IC) Continuous
200 mA
DC Current Gain (hFE)
30 to 300 (varies with collector current)
Power Dissipation (PD)
625 mW
Transition Frequency (fT)
100 MHz
Package Type
TO-18 Metal Can
JAN2N3749-Transistor Key Features
High voltage rating: Supports up to 100V collector-emitter voltage, enabling use in circuits requiring medium voltage handling capability.
Wide DC current gain range: Offers versatility in amplification tasks across different collector currents, enhancing design flexibility.
Low power dissipation: With a maximum power rating of 625mW, it ensures efficient thermal management in compact circuit layouts.
High transition frequency: Operates efficiently at frequencies up to 100MHz, suitable for switching and signal processing in moderate-frequency applications.
Typical Applications
Signal Amplification: Ideal for low to medium power amplifier stages in audio, instrumentation, and communication circuits due to stable gain and frequency response.
Switching Circuits: Suitable for use in electronic switching applications where medium voltage and current handling are required.
Driver Stages: Effectively drives relay coils or low power loads in control systems, ensuring reliable activation and deactivation.
General Purpose Transistor: Applicable in educational, prototyping, and industrial designs requiring a dependable NPN transistor with moderate power capabilities.
JAN2N3749-Transistor Advantages vs Typical Alternatives
This transistor offers a robust voltage rating and a wide current gain range, providing greater design flexibility compared to typical low-voltage transistors. Its metal-can TO-18 package enhances thermal dissipation and reliability, outperforming plastic-encapsulated alternatives in harsh environments. The high transition frequency supports fast switching, making it preferable for applications demanding both speed and power efficiency. These combined attributes make it a reliable and versatile choice for engineers sourcing transistors in medium power industrial and commercial applications.
The JAN2N3749 is a military-grade variant of the standard 2N3749 transistor, originally produced under the Joint Army-Navy (JAN) specification ensuring rigorous quality and reliability standards. The JAN prefix indicates compliance with strict military requirements, including controlled manufacturing processes and enhanced environmental testing. This transistor variant is often sourced from manufacturers specializing in high-reliability components for aerospace, defense, and critical industrial systems. Its legacy and certification make it a trusted option where long-term stability and performance consistency are paramount.
