JAN2N1890-Transistor NPN Bipolar Junction Transistor, TO-126 Package by ON Semiconductor

JAN2N1890-Transistor Overview

The JAN2N1890 transistor is a high-performance NPN bipolar junction transistor widely used in industrial and military applications requiring robust switching and amplification characteristics. Designed to operate reliably under demanding conditions, it features a high voltage rating and substantial current capacity, making it ideal for power amplification and control circuits. This transistor delivers consistent gain and low noise, ensuring stable operation in precision electronic systems. Sourced from a trusted manufacturer, the device complies with stringent military standards, offering enhanced durability and longevity. For detailed technical and application support, visit IC Manufacturer.

JAN2N1890-Transistor Technical Specifications

JAN2N1890-Transistor Key Features

• High Voltage and Current Handling: Supports collector-emitter voltage up to 100 V and collector current up to 10 A, enabling use in power amplification and switching applications.
• Wide Operating Temperature Range: Rated from -65??C to +200??C, ensuring reliable performance in harsh environments including military and aerospace systems.
• Robust Power Dissipation Capability: With a maximum power dissipation of 75 W, this transistor efficiently manages thermal loads for sustained operation.
• TO-3 Metal Can Package: Provides superior heat dissipation and mechanical durability, facilitating integration in industrial-grade electronic assemblies.

Typical Applications

• Power amplification circuits in military communication and radar systems, leveraging its high current capacity and voltage tolerance for stable signal processing.
• Switching devices in industrial motor control, benefiting from its robust power handling and thermal stability.
• High-reliability amplifier stages in aerospace electronics, where consistent gain and temperature endurance are critical.
• General-purpose power transistor use in custom electronic designs requiring durable and reliable switching components.

JAN2N1890-Transistor Advantages vs Typical Alternatives

This transistor offers superior voltage and current ratings compared to many standard NPN devices, making it ideal for demanding power applications. Its wide temperature range and rugged TO-3 package enhance reliability and thermal management, outperforming typical plastic-encapsulated alternatives. These factors contribute to improved accuracy and operational stability in challenging environments, ensuring long-term performance and reduced risk of failure in critical industrial and military applications.

JAN2N1890-Transistor Brand Info

The JAN2N1890 transistor is a military-grade semiconductor device originally produced under the Joint Army-Navy (JAN) specification, ensuring compliance with rigorous performance and reliability standards. Manufactured by established semiconductor producers adhering to MIL-STD-750 testing protocols, this transistor is designed for high-reliability applications in defense and aerospace sectors. The TO-3 metal can package is a hallmark of durability and thermal efficiency, commonly used in power transistors from legacy suppliers known for quality and consistency in harsh operating conditions.

FAQ

What is the maximum collector current rating of this transistor?

The maximum collector current for this device is 10 amperes, allowing it to handle significant power loads in amplification and switching circuits without risk of damage, provided it is operated within specified limits.

Can this transistor operate in extreme temperature environments?

Yes, it is rated for operation from -65??C up to +200??C, making it suitable for harsh environments such as military and aerospace applications where temperature extremes are common.