JANSM2N3019-Transistor NPN Amplifier Transistor in TO-18 Metal Can Package

JANSM2N3019-Transistor Overview

The JANSM2N3019 transistor is a robust NPN silicon transistor designed for medium power amplification and switching applications. It is known for its reliable performance under a maximum collector current of 800mA and collector-emitter voltage of 60V, making it suitable for industrial and consumer electronic circuits. Featuring a complementary PNP counterpart, it enables efficient push-pull amplifier designs. Its sturdy construction supports stable operation across a wide temperature range, ensuring dependable functionality in demanding environments. Engineers and sourcing specialists rely on this device for its balance of power handling and switching speed. For detailed specifications and sourcing, visit IC Manufacturer.

JANSM2N3019-Transistor Technical Specifications

JANSM2N3019-Transistor Key Features

• High voltage capability: With a collector-emitter voltage rating of 60V, it efficiently handles medium voltage circuits, ensuring durability in power applications.
• Moderate collector current: The 800mA rating supports a broad range of switching and amplification needs without excessive thermal management.
• Wide frequency response: Featuring a transition frequency around 100 MHz, it is suitable for RF amplification and fast switching tasks.
• Robust gain range: A DC current gain varying from 40 to 160 allows flexibility in circuit design for optimized performance.
• Reliable TO-18 package: The metal can construction enhances heat dissipation and mechanical stability in industrial environments.

Typical Applications

• Medium power audio amplifiers: Its voltage and current ratings support reliable amplification of audio signals in consumer and professional audio equipment.
• Switching circuits: Provides efficient switching in relay drivers and general-purpose control circuits requiring moderate current handling.
• RF amplifiers: The high transition frequency allows use in intermediate frequency stages and RF signal processing.
• Signal processing: Used in analog signal conditioning where moderate gain and power handling are required.

JANSM2N3019-Transistor Advantages vs Typical Alternatives

This transistor offers a balanced combination of voltage tolerance, current capacity, and frequency response superior to many general-purpose transistors. Its metal can TO-18 packaging ensures enhanced thermal performance and mechanical robustness compared to plastic encapsulated alternatives. The broad gain range and high transition frequency enable versatile use across switching and amplification functions, making it an efficient and reliable choice for industrial and audio applications.

JANSM2N3019-Transistor Brand Info

The JANSM2N3019 is a military-grade transistor variant originally developed under the JAN (Joint Army-Navy) specification, ensuring stringent quality and reliability standards. Manufactured by established semiconductor producers adhering to defense and industrial requirements, this transistor is known for consistent performance in harsh environments. It aligns with legacy 2N3019 transistor characteristics but undergoes rigorous screening for operation in mission-critical systems. Its heritage reflects a commitment to durability and precise electronic control, favored by engineers designing rugged and dependable electronic assemblies.

FAQ

What type of transistor is the JANSM2N3019 and what are its basic characteristics?

The JANSM2N3019 is an NPN silicon bipolar junction transistor designed for medium power amplification and switching. It supports collector-emitter voltages up to 60V and collector currents up to 800mA,