JANSL2N3019-Transistor Overview
The JANSL2N3019-Transistor is a robust NPN bipolar junction transistor designed for high-voltage switching and amplification applications. It offers a collector-to-emitter voltage rating suitable for demanding industrial environments, ensuring reliable operation under elevated voltage conditions. With a moderate current capacity and gain characteristics tailored for linear and switching circuits, this transistor is well-suited for power amplification and signal processing tasks. Its TO-18 metal can package provides excellent thermal performance and mechanical durability, meeting the needs of engineers and sourcing specialists seeking dependable discrete semiconductor components. More details are available from the IC Manufacturer.
JANSL2N3019-Transistor Technical Specifications
| Parameter | Specification |
|---|---|
| Type | NPN Bipolar Junction Transistor |
| Collector-Emitter Voltage (VCEO) | 100 V |
| Collector-Base Voltage (VCBO) | 120 V |
| Emitter-Base Voltage (VEBO) | 5 V |
| Collector Current (IC) | 0.8 A |
| Power Dissipation (Ptot) | 1.0 W |
| DC Current Gain (hFE) | 40 to 160 (varies with test conditions) |
| Transition Frequency (fT) | 50 MHz (typical) |
| Package | TO-18 Metal Can |
JANSL2N3019-Transistor Key Features
- High voltage rating: Supports up to 100 V collector-emitter voltage, enabling operation in high-voltage switching circuits.
- Moderate current capability: Handles collector current up to 0.8 A, suitable for small power amplification needs.
- Wide DC current gain range: Offers flexibility in circuit design with gain from 40 to 160, allowing tailored amplification levels.
- Reliable metal can package: The TO-18 casing provides superior thermal dissipation and mechanical robustness compared to plastic packages.
Typical Applications
- Used in amplifier stages for audio and signal processing circuits where moderate power and high voltage tolerance are required.
- Suitable for switching regulators and power control modules in industrial electronics.
- Applicable in driver stages for relays and solenoids requiring reliable switching performance.
- Employed in analog and digital circuits needing rugged discrete transistors for voltage amplification and switching.
JANSL2N3019-Transistor Advantages vs Typical Alternatives
This transistor stands out by combining high voltage capability with a durable metal can package, offering enhanced thermal management and longevity compared to plastic-encapsulated alternatives. Its broad current gain range supports diverse circuit requirements, improving design flexibility. The reliable switching and amplification performance make it a preferred choice for industrial and power electronics where sensitivity and accuracy are critical.
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JANSL2N3019-Transistor Brand Info
The JANSL2N3019-Transistor is a product commonly sourced from established semiconductor manufacturers specializing in discrete transistor devices for industrial and commercial applications. This transistor typically originates from suppliers with a legacy of producing reliable bipolar junction transistors designed for high voltage and power usage. The TO-18 metal can package is a hallmark of quality and durability associated with such brands, ensuring consistent performance across demanding operating conditions. For sourcing and technical support, customers often refer to distributors linked to recognized semiconductor manufacturers.
FAQ
What type of transistor is the JANSL2N3019?
It is an NPN bipolar junction transistor (BJT), designed primarily for switching and amplification tasks in circuits requiring moderate current and high voltage tolerance.
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What is the maximum collector-emitter voltage rating for this transistor?
The maximum collector-to-emitter voltage is 100 volts, allowing it to be used safely in high-voltage applications without risk of breakdown.
How much current can this transistor handle?
This device can handle a collector current up to 0.8 amperes, which makes it suitable for small power amplification and switching loads.






