JANSF2N2221A-Transistor NPN Switching Amplifier in TO-18 Metal Can Package

  • This transistor amplifies and switches electronic signals, enabling efficient control in various circuits.
  • It features a specific gain characteristic that ensures stable performance in amplification tasks.
  • The compact package design supports easy integration and conserves valuable board space.
  • Ideal for signal processing in consumer electronics, improving device responsiveness and reliability.
  • Manufactured following strict quality standards to provide consistent operation under normal conditions.
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JANSF2N2221A-Transistor Overview

The JANSF2N2221A is a robust NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. Manufactured to meet military specifications, it offers enhanced reliability and consistent performance under demanding conditions. Its moderate power rating and high current gain make it ideal for industrial control circuits and signal amplification tasks. This transistor??s versatility is well recognized among engineers and sourcing specialists aiming for dependable semiconductor components. For detailed sourcing and technical data, visit IC Manufacturer.

JANSF2N2221A-Transistor Technical Specifications

Parameter Value Unit
Type NPN
Collector-Emitter Voltage (VCEO) 40 V
Collector-Base Voltage (VCBO) 75 V
Emitter-Base Voltage (VEBO) 6 V
Collector Current (IC) 600 mA
Power Dissipation (PD) 625 mW
DC Current Gain (hFE) 100 – 300 (typical)
Transition Frequency (fT) 250 MHz
Package Type TO-18 Metal Can

JANSF2N2221A-Transistor Key Features

  • High Current Gain: Enables effective signal amplification with minimal input, optimizing circuit sensitivity and performance.
  • Military-Grade Construction: Ensures superior reliability and consistent operation in harsh environments, critical for defense and aerospace applications.
  • Moderate Power Handling: Supports up to 625mW dissipation, balancing thermal management and efficiency for versatile usage.
  • Wide Frequency Response: With a transition frequency up to 250MHz, suitable for moderate-speed switching and RF amplification.

Typical Applications

  • Signal amplification in audio and instrumentation circuits, where precise gain and low noise are essential for accurate data processing.
  • Switching devices in industrial control systems requiring reliable performance under varying load and temperature conditions.
  • Driver stage transistors in relay and solenoid control, leveraging its current capacity and gain characteristics.
  • General-purpose use in military and aerospace electronics, where ruggedness and long-term reliability are mandatory.

JANSF2N2221A-Transistor Advantages vs Typical Alternatives

This transistor offers a superior combination of high current gain and military-grade reliability compared to typical commercial BJTs. Its robust construction minimizes performance degradation in harsh environments. The moderate power dissipation rating and wide frequency response provide flexibility for various industrial and defense applications. This makes it a preferred choice when sensitivity, durability, and consistent operation are critical, enhancing overall system reliability and efficiency.

JANSF2N2221A-Transistor Brand Info

The JANSF2N2221A is a military specification variant of the widely used 2N2221 transistor, originally standardized and produced by various semiconductor manufacturers compliant with JAN (Joint Army-Navy) standards. This ensures stringent quality control, extended temperature ranges, and rigorous testing protocols. The device is often sourced from reputable manufacturers specializing in defense-grade semiconductors, supporting mission-critical electronics across aerospace, defense, and industrial sectors.

FAQ

What is the maximum collector current rating for the JANSF2N2221A?

The maximum collector current rating is 600mA. This rating defines the highest continuous current the transistor can handle through the collector terminal without damage, making it suitable for

Application

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