JANS2N3019S-Transistor Overview
The JANS2N3019S transistor is a rugged, high-performance NPN bipolar junction transistor designed for industrial and military applications requiring reliable operation under harsh conditions. Featuring a robust construction with JAN (Joint Army-Navy) qualification, this transistor delivers consistent switching and amplification capabilities with dependable gain characteristics. It supports collector currents up to 800mA and voltage ratings suitable for medium-power applications. This device is ideal for engineers and sourcing specialists seeking a proven transistor with enhanced durability and stable electrical parameters. For detailed technical data and procurement options, visit IC Manufacturer.
JANS2N3019S-Transistor Technical Specifications
| Parameter | Specification |
|---|---|
| Transistor Type | NPN Bipolar Junction |
| Collector-Emitter Voltage (VCEO) | 60 V |
| Collector-Base Voltage (VCBO) | 75 V |
| Emitter-Base Voltage (VEBO) | 5 V |
| Collector Current (IC) | 800 mA max |
| Power Dissipation (Ptot) | 625 mW (at 25??C) |
| DC Current Gain (hFE) | 40 to 100 (at IC=150mA) |
| Transition Frequency (fT) | 80 MHz typical |
| Package Type | TO-18 Metal Can |
| Operating Temperature Range | -65??C to +200??C |
JANS2N3019S-Transistor Key Features
- High Collector Current Capacity: Supports up to 800 mA collector current, enabling reliable operation in medium-power amplification and switching circuits.
- Wide Voltage Ratings: With 60 V collector-emitter and 75 V collector-base voltage limits, it suits a broad range of industrial control and signal processing applications.
- JAN Military Qualification: Ensures enhanced ruggedness and reliability for critical environments where device failure is not an option.
- High Transition Frequency: Offers typical fT of 80 MHz, facilitating efficient high-speed switching and amplification in RF and general-purpose circuits.
- TO-18 Hermetic Package: Provides superior protection against environmental factors, improving long-term stability and performance.
Typical Applications
- Industrial control systems requiring robust signal amplification under varying environmental conditions, benefiting from the transistor’s high reliability and rugged construction.
- Switching circuits in automotive and aerospace electronics, leveraging its high voltage and current ratings for dependable performance.
- RF amplification stages in communication equipment where moderate frequency response and gain stability are essential.
- Military and aerospace applications that demand JAN-qualified components capable of operating reliably across a wide temperature range.
JANS2N3019S-Transistor Advantages vs Typical Alternatives
This transistor delivers superior reliability and ruggedness compared to typical commercial-grade alternatives, thanks to its JAN military qualification and hermetic TO-18 packaging. Its combination of high collector current, voltage ratings, and stable gain makes it more suitable for demanding industrial and aerospace applications. Engineers benefit from its proven performance under extreme temperatures and environmental stress, ensuring long-term operational stability and reduced failure rates.
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JANS2N3019S-Transistor Brand Info
The JANS2N3019S transistor is a legacy military-standard device originally produced under stringent Joint Army-Navy specifications, ensuring compliance with rigorous quality and reliability standards. It is commonly associated with manufacturers specializing in high-reliability semiconductors for defense and aerospace sectors. This device??s robust design and JAN certification make it a trusted choice for engineers requiring components qualified to operate in harsh and mission-critical environments.
FAQ
What is the maximum collector current for this transistor?
The maximum collector current rating is 800 mA, allowing the transistor to handle moderate power levels in switching and amplification circuits safely without degradation.
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What temperature range can this transistor reliably operate within?
This device is rated







