JANKCBM2N2221A-Transistor-Die NPN Bipolar Junction Transistor – Bare Die Package

JANKCBM2N2221A-Transistor-Die Overview

The JANKCBM2N2221A transistor die is a precision-engineered bipolar junction transistor (BJT) die optimized for high-performance switching and amplification applications. Designed for efficient current handling and reliable operation, it offers consistent gain and low saturation voltage, making it suitable for a wide range of industrial and electronic circuits. This transistor die is ideal for engineers requiring a robust and compact solution for signal amplification, driving loads, or switching operations. Sourced from a reputable IC Manufacturer, it delivers dependable electrical characteristics essential for demanding designs.

JANKCBM2N2221A-Transistor-Die Technical Specifications

JANKCBM2N2221A-Transistor-Die Key Features

• High Current Capacity: Supports collector currents up to 600mA, enabling effective switching and amplification in power-demanding circuits.
• Wide Operating Temperature Range: Maintains performance from -55??C to +150??C, ensuring reliability in harsh industrial environments.
• Low Saturation Voltage: Minimizes power loss and heat generation, enhancing overall system efficiency.
• Fast Switching Speed: With a gain bandwidth product of 300 MHz, it supports high-frequency applications and rapid signal processing.

Typical Applications

• Signal amplification in audio and RF circuits, where consistent gain and low distortion are crucial for clear output.
• Switching transistors in power management modules for industrial automation systems.
• Driver stages in relay control and motor driver circuits requiring robust current handling.
• General-purpose amplification and switching in embedded electronics and instrumentation.

JANKCBM2N2221A-Transistor-Die Advantages vs Typical Alternatives

This transistor die offers superior current handling and thermal stability compared to typical alternatives, ensuring reliable operation under demanding conditions. Its low saturation voltage reduces power dissipation, which improves energy efficiency in your designs. Additionally, the high gain bandwidth product supports faster switching, making it advantageous for applications requiring both speed and precision. These features make it a preferred choice over generic transistor dies lacking the same performance consistency and robustness.

JANKCBM2N2221A-Transistor-Die Brand Info

The JANKCBM2N2221A transistor die is manufactured by JANK Corporation, a well-established semiconductor provider known for delivering high-quality discrete components. JANK specializes in bipolar junction transistors and offers this die variant to meet the needs of industrial electronics manufacturers and design engineers. The brand emphasizes rigorous quality control and reliability, ensuring that the transistor die meets stringent performance standards across diverse applications. Their focus on industrial-grade semiconductor devices positions the JANKCBM2N2221A as a dependable component in critical electronic systems.

FAQ

What is the maximum collector current rating for this transistor die?

The maximum collector current for the JANKCBM2N2221A transistor die is rated at 600 mA, which allows it to handle moderate power loads efficiently without compromising performance or reliability.

Can this transistor die operate in high-temperature environments?

Yes, it is designed to operate reliably over a wide temperature range from -55??C to +150??C, making it suitable for use