JANKCBD2N2906A Transistor Die – PNP Bipolar Junction Transistor, Die Package

  • This transistor die controls current flow efficiently, enabling precise amplification in electronic circuits.
  • Its electrical characteristics support stable operation, ensuring consistent signal performance under varying conditions.
  • The compact die size allows for space-saving designs in densely packed circuit boards and devices.
  • Ideal for integration in power regulation modules, it helps maintain voltage stability in complex systems.
  • Manufactured under strict quality protocols, it offers dependable performance and long-term durability.
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JANKCBD2N2906A-Transistor-Die Overview

The JANKCBD2N2906A-Transistor-Die is a PNP bipolar junction transistor die designed for high-performance analog and switching applications. Engineered for reliable operation in industrial and consumer electronics, this transistor die offers stable gain characteristics and robust current handling capabilities. Its compact die format supports efficient integration into custom semiconductor packages or modules, making it ideal for designers seeking precise control of amplification and switching functions. Manufactured under stringent quality standards, this transistor die ensures consistent electrical performance and enhances system reliability. For detailed sourcing and technical support, visit the IC Manufacturer website.

JANKCBD2N2906A-Transistor-Die Technical Specifications

ParameterSpecification
TypePNP Bipolar Junction Transistor
Collector-Emitter Voltage (VCEO)40 V
Collector Current (IC)600 mA
Power Dissipation (PD)625 mW (on die)
Current Gain (hFE)100 ?C 300
Transition Frequency (fT)100 MHz (typical)
Base-Emitter Voltage (VBE)0.7 V (typical)
Operating Temperature Range-55??C to +150??C
Package TypeTransistor Die (bare silicon chip)

JANKCBD2N2906A-Transistor-Die Key Features

  • High Current Handling: Supports continuous collector current up to 600 mA, enabling robust switching and amplification in demanding circuits.
  • Stable Gain Characteristics: Featuring a current gain range of 100 to 300, which ensures predictable and consistent transistor performance across varying operating conditions.
  • Compact Die Format: Bare die packaging facilitates integration into custom modules or hybrid circuits, allowing flexible design options for engineers.
  • Wide Operating Temperature: Reliable performance from -55??C to +150??C supports applications in harsh industrial environments.

Typical Applications

  • Signal amplification in analog circuits where precise PNP transistor characteristics are required to maintain linearity and low distortion.
  • Switching applications in power management systems for industrial automation, providing efficient control of current flow.
  • Integration into custom semiconductor packages for use in power supplies and motor driver circuits requiring robust transistor dies.
  • Use in discrete transistor modules for consumer electronics, delivering reliable performance in audio amplification and switching roles.

JANKCBD2N2906A-Transistor-Die Advantages vs Typical Alternatives

This transistor die offers superior integration flexibility compared to packaged transistors, allowing engineers to optimize thermal management and board space. Its stable gain and high current capacity provide enhanced accuracy and reliability over generic PNP transistors. The wide operating temperature range extends usability in industrial and automotive environments where temperature extremes are common, giving this device a distinct advantage in demanding applications.

JANKCBD2N2906A-Transistor-Die Brand Info

The JANKCBD2N2906A-Transistor-Die is produced by a leading semiconductor manufacturer specializing in discrete components and transistor dies. This product line reflects the company??s commitment to high-quality silicon fabrication and advanced process controls, ensuring excellent electrical consistency and reliability. Designed for industrial-grade applications, the transistor die benefits from rigorous testing and quality assurance protocols, making it a dependable choice for engineers designing robust electronic systems.

FAQ

What is the maximum collector current rating for this transistor die?

The maximum continuous collector current rating for this transistor die is 600 mA. This allows it to handle moderate power levels suitable for switching and amplification in various industrial and consumer circuits.

Can this transistor die operate at high frequencies?

Yes, the device has a typical transition frequency (fT) of 100 MHz, making it suitable for applications requiring moderate frequency response and fast switching capabilities.

What temperature range can this transistor die reliably operate within?

The transistor die is specified to operate reliably over a wide

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