2N335A-Transistor Overview
The 2N335A is a robust silicon NPN bipolar junction transistor designed for amplification and switching applications in industrial electronic circuits. It features moderate power handling capabilities and reliable performance across a range of voltages and currents, making it suitable for use in audio amplifiers, signal processing, and general-purpose switching. With a collector-emitter voltage rating of 40V and a collector current capacity of up to 1A, it offers a balanced combination of power and efficiency. Sourcing specialists and engineers rely on its consistent gain characteristics and thermal stability to optimize circuit reliability. For detailed manufacturing and sourcing information, visit the IC Manufacturer website.
2N335A-Transistor Technical Specifications
| Parameter | Specification |
|---|---|
| Transistor Type | NPN Bipolar Junction Transistor |
| Collector-Emitter Voltage (VCEO) | 40 V |
| Collector-Base Voltage (VCBO) | 60 V |
| Emitter-Base Voltage (VEBO) | 5 V |
| Collector Current (IC) | 1 A (continuous) |
| Power Dissipation (PD) | 15 W (max, with proper heat sinking) |
| DC Current Gain (hFE) | 50 to 300 (depending on operating point) |
| Transition Frequency (fT) | 40 MHz (typical) |
| Package Type | TO-39 Metal Can |
2N335A-Transistor Key Features
- Moderate power handling: Supports up to 15 W power dissipation with adequate heat sinking, enabling reliable operation in medium-power circuits.
- High collector current capacity: Handles continuous collector currents up to 1 A, suitable for a variety of switching and amplification tasks.
- Wide voltage ratings: With a collector-emitter voltage rating of 40 V and collector-base voltage of 60 V, it accommodates diverse industrial voltage requirements.
- Stable gain characteristics: Provides consistent DC current gain (hFE) across operating conditions, simplifying design margin calculations.
- Low noise operation: Ideal for low-level signal amplification, contributing to clear signal processing in audio and instrumentation circuits.
- Robust TO-39 package: Metal can encapsulation offers enhanced thermal conductivity and mechanical durability.
Typical Applications
- Audio amplifier stages requiring linear amplification and low distortion, benefiting from the transistor??s stable gain and low noise performance.
- General-purpose switching in industrial automation circuits where moderate power and voltage ratings are necessary.
- Signal processing modules in instrumentation systems, leveraging the transistor??s frequency response and gain stability.
- Driver stages for relay and solenoid control, utilizing the transistor??s ability to handle continuous collector currents up to 1A.
2N335A-Transistor Advantages vs Typical Alternatives
This transistor offers a balanced combination of current capacity, voltage tolerance, and gain stability that outperforms many general-purpose alternatives. Its robust TO-39 metal can package ensures superior heat dissipation and mechanical reliability compared to plastic encapsulated devices. The consistent DC gain and low noise figure provide enhanced signal integrity in amplification circuits. These characteristics make it a preferred choice for engineers seeking dependable performance in mid-power industrial and audio applications.
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2N335A-Transistor Brand Info
The 2N335A transistor is a standard silicon NPN device originally introduced by several semiconductor manufacturers, including Motorola and Fairchild Semiconductor, now part of ON Semiconductor and other legacy suppliers. It remains widely available through multiple industrial distributors and is recognized for its durability and versatility in a broad range of electronic designs. The transistor is manufactured under strict quality controls to meet industrial standards, ensuring consistent electrical performance and reliability in demanding environments.
