The JANS2N2905A is a rugged, high-performance PNP bipolar junction transistor (BJT) designed for a wide range of industrial and military-grade applications. Known for its reliable operation under harsh conditions, this transistor offers stable amplification and switching capabilities with a maximum collector current of 600 mA and a collector-emitter voltage rating of 60 V. It is housed in a TO-18 metal can package, ensuring enhanced thermal dissipation and robustness. This device complies with JAN (Joint Army-Navy) standards, making it suitable for aerospace, defense, and other critical systems requiring dependable semiconductor components. For comprehensive sourcing and technical support, visit IC Manufacturer.
JANS2N2905A-Transistor Technical Specifications
Parameter
Specification
Transistor Type
PNP Bipolar Junction Transistor
Collector-Emitter Voltage (VCEO)
60 V
Collector-Base Voltage (VCBO)
60 V
Emitter-Base Voltage (VEBO)
5 V
Collector Current (IC)
600 mA
Power Dissipation (Ptot)
800 mW
DC Current Gain (hFE)
100 to 300 (depending on IC)
Transition Frequency (fT)
100 MHz (typical)
Package
TO-18 Metal Can
JANS2N2905A-Transistor Key Features
Military-grade reliability: Designed to meet JAN specifications, this transistor ensures consistent performance in extreme temperature and mechanical stress environments.
High voltage and current tolerance: Supports collector-emitter voltages up to 60 V and collector currents up to 600 mA, enabling versatile application in medium-power circuits.
Robust metal can packaging: The TO-18 metal case enhances heat dissipation and mechanical durability, key for long-term stability and reliability in demanding industrial settings.
Wide frequency response: With a transition frequency near 100 MHz, it effectively handles moderate-frequency amplification and switching tasks.
Typical Applications
Used in aerospace and defense electronics where military-grade reliability and thermal stability are crucial for signal amplification and switching.
Suitable for industrial control circuits requiring durable PNP transistors with moderate voltage and current handling capabilities.
Employed in low-noise audio amplifier stages benefiting from the device??s stable gain and linearity characteristics.
Applicable in power management circuits where robust transistor operation under temperature extremes is necessary.
JANS2N2905A-Transistor Advantages vs Typical Alternatives
This transistor offers superior reliability and ruggedness compared to standard commercial PNP BJTs, thanks to its compliance with stringent JAN military standards. Its metal can package ensures enhanced heat dissipation and mechanical protection, which is critical for high-reliability applications. Additionally, the combination of moderate voltage and current ratings with a wide frequency response makes it versatile for multiple industrial and defense uses, outperforming typical alternatives in durability and thermal stability.
The JANS2N2905A transistor is a military-specification version of the popular 2N2905A device, originally standardized by JEDEC and produced by several semiconductor manufacturers under JAN certification. The ??JAN?? prefix indicates qualification to Joint Army-Navy standards, ensuring the transistor meets strict quality and reliability criteria. This device is widely supplied by manufacturers specializing in aerospace and defense electronic components, reflecting its trusted status in critical applications. Its consistent performance and adherence to military standards make it a preferred choice for engineers designing high-reliability systems.
