JANS2N5154L-Transistor Overview
The JANS2N5154L transistor is a high-performance NPN bipolar junction transistor designed for military and aerospace applications requiring stringent quality and reliability standards. It features a low noise figure and high gain, making it suitable for RF and general-purpose amplification tasks. Qualified to JAN (Joint Army-Navy) standards, this transistor ensures enhanced durability and stable operation under harsh environmental conditions. Ideal for engineers and sourcing specialists working on defense-grade electronics, this component offers dependable switching and amplification capabilities. For more detailed specifications and sourcing, visit IC Manufacturer.
JANS2N5154L-Transistor Technical Specifications
| Parameter | Specification |
|---|---|
| Type | NPN Bipolar Junction Transistor |
| Collector-Emitter Voltage (VCEO) | 25 V |
| Collector-Base Voltage (VCBO) | 30 V |
| Emitter-Base Voltage (VEBO) | 5 V |
| Collector Current (IC) | 100 mA |
| Power Dissipation (Ptot) | 300 mW |
| Transition Frequency (fT) | 80 MHz (minimum) |
| DC Current Gain (hFE) | 40 to 300 (at IC=10 mA) |
| Noise Figure | Low noise, suitable for RF applications |
JANS2N5154L-Transistor Key Features
- High gain performance: Enables amplification with minimal input signal, improving circuit sensitivity and signal integrity.
- Low noise characteristics: Critical for RF and audio frequency circuits where signal clarity is paramount.
- Military-grade reliability: Meets stringent JAN quality standards ensuring long-term stability in harsh environments.
- Wide frequency response: Supports applications up to 80 MHz, facilitating use in communication and control systems.
Typical Applications
- RF amplification in military communication devices, where low noise and stable gain are essential for signal fidelity and operational reliability.
- Switching circuits requiring robust transistor performance under wide temperature ranges.
- General-purpose amplification in aerospace electronics, benefiting from the device??s ruggedness and reliability.
- Signal processing modules in defense systems demanding consistent electrical characteristics and high gain.
JANS2N5154L-Transistor Advantages vs Typical Alternatives
This transistor offers superior noise performance and consistent gain compared to standard commercial-grade devices. Its JAN certification guarantees reliability and environmental robustness critical for military and aerospace use. These advantages make it preferable over typical alternatives by delivering enhanced signal accuracy, long-term stability, and dependable operation in demanding applications.
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JANS2N5154L-Transistor Brand Info
The JANS2N5154L is a product designed and manufactured under strict military standards, typically produced by companies specializing in defense-grade semiconductors. The ??JANS?? prefix denotes Joint Army-Navy Specification compliance, ensuring rigorous testing and quality assurance. This transistor is part of a family of devices standardized for use in highly reliable and secure government and aerospace electronics, reflecting a legacy of trusted semiconductor manufacturing for critical applications.
FAQ
What voltage ratings does this transistor support?
The transistor supports a maximum collector-emitter voltage of 25 V, collector-base voltage of 30 V, and emitter-base voltage of 5 V, ensuring suitability for low to moderate voltage amplification and switching tasks.
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Can this transistor be used in RF applications?
Yes, the device features a low noise figure and a transition frequency of at least 80 MHz, making it well-suited for RF amplification and signal processing in communication systems.
What does the JAN qualification mean for this transistor?
JAN qualification indicates the transistor meets stringent military standards for quality, reliability, and performance under harsh environmental conditions, making it ideal for defense and aerospace applications.
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What is the typical current handling capability of this transistor?
The maximum collector current is rated at 100 mA, allowing for moderate power amplification and switching functions






