JANS2N5153L-Transistor Overview
The JANS2N5153L transistor is a silicon NPN bipolar junction transistor (BJT) designed for high-reliability military and aerospace applications. It features a low noise figure and high gain, making it suitable for sensitive analog signal amplification and switching tasks. This transistor is housed in a hermetically sealed TO-39 metal can package, ensuring robust performance under harsh environmental conditions. With a collector-emitter voltage rating of 40V and a collector current capacity of 100mA, it supports moderate power applications. It is available through IC Manufacturer and is engineered to meet stringent quality and reliability standards expected in demanding industrial and defense electronics.
JANS2N5153L-Transistor Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Transistor Type | NPN | – |
| Collector-Emitter Voltage (VCEO) | 40 | V |
| Collector-Base Voltage (VCBO) | 60 | V |
| Emitter-Base Voltage (VEBO) | 5 | V |
| Collector Current (IC) | 100 | mA |
| DC Current Gain (hFE) | 40 to 160 | – |
| Transition Frequency (fT) | 100 | MHz |
| Noise Figure | 3 | dB (typical) |
| Package Type | TO-39 Metal Can | – |
| Operating Temperature Range | -55 to +125 | ??C |
JANS2N5153L-Transistor Key Features
- Low noise performance: Ideal for high-fidelity signal amplification in communication and radar circuits where signal integrity is critical.
- Wide DC current gain range: Enables flexible biasing and gain control for precise analog circuit design.
- Hermetically sealed TO-39 package: Provides excellent environmental protection and long-term reliability in aerospace and military-grade applications.
- High transition frequency (100 MHz): Supports high-speed switching and RF amplification tasks.
- Robust voltage and current ratings: Suitable for moderate power applications with voltage up to 60 V and collector current of 100 mA.
Typical Applications
- Low-noise preamplifiers in RF communication equipment for military and aerospace systems, where signal clarity and reliability are critical.
- Switching components in control and instrumentation circuits requiring stable performance over wide temperature ranges.
- Analog signal processing in sensor interfaces and measurement devices that demand low distortion and consistent gain.
- General-purpose amplification in defense electronics, including radar and telemetry subsystems.
JANS2N5153L-Transistor Advantages vs Typical Alternatives
This transistor offers superior noise performance and a hermetically sealed metal package compared to many standard plastic-encapsulated BJTs. Its broad operating temperature range and robust voltage and current ratings make it more reliable under harsh conditions, enhancing system stability in aerospace and military applications. The high transition frequency and wide gain variability provide greater design flexibility and improved signal fidelity, distinguishing it from typical commercial-grade alternatives.
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JANS2N5153L-Transistor Brand Info
The JANS2N5153L transistor belongs to the JAN (Joint Army-Navy) series of semiconductor devices, recognized for their stringent reliability and quality standards tailored for military and aerospace use. These devices are typically manufactured by established semiconductor suppliers specializing in high-reliability discrete components. The JAN prefix denotes rigorous testing and qualification processes, including hermetic sealing and controlled manufacturing environments, ensuring consistent performance in critical defense and industrial applications.
FAQ
What is the main difference between the JANS2N5153L and standard 2N5153 transistors?
The primary difference lies in the JAN designation, which indicates that the JANS2N5153L transistor is built to meet military-grade standards. This includes hermetic sealing, extended temperature range, and enhanced reliability compared to commercial-grade 2N
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