JAN2N6350-Transistor NPN Power Transistor in TO-3 Metal Can Package ?C Fairchild Semiconductor

  • This transistor controls current flow efficiently, enabling precise switching and amplification in electronic circuits.
  • High voltage tolerance ensures stable operation under demanding electrical conditions, enhancing circuit durability.
  • Its compact package type supports board-space savings, facilitating integration into dense electronic designs.
  • Ideal for power regulation tasks in consumer electronics, improving device performance and energy management.
  • Manufactured to meet industry reliability standards, ensuring consistent function over extended usage periods.
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JAN2N6350-Transistor Overview

The JAN2N6350 is a high-voltage NPN bipolar junction transistor designed for industrial and military-grade applications requiring robust performance and reliability. It supports collector-emitter voltages up to 400V and collector currents up to 10A, making it suitable for power switching and amplification tasks. The device offers a DC current gain (hFE) range optimized for linear operation and switching efficiency. Packaged in a TO-3 metal can, it ensures excellent thermal dissipation and durability under demanding conditions. This transistor delivers consistent performance and longevity, ideal for engineers and sourcing specialists focused on dependable power transistor solutions. For sourcing and detailed technical data, visit IC Manufacturer.

JAN2N6350-Transistor Technical Specifications

ParameterSpecificationUnit
Collector-Emitter Voltage (VCEO)400V
Collector-Base Voltage (VCBO)600V
Emitter-Base Voltage (VEBO)7V
Collector Current (IC)10A
Power Dissipation (PD)115W
DC Current Gain (hFE)20 to 70(unitless)
Transition Frequency (fT)3MHz
Operating Junction Temperature (TJ)-65 to +200??C

JAN2N6350-Transistor Key Features

  • High voltage tolerance: Supports up to 400 V collector-emitter voltage, enabling use in demanding high-voltage circuits.
  • Robust current handling: Capable of continuous collector current up to 10 A, suitable for power amplification and switching applications.
  • Wide temperature range: Operates reliably from -65??C to +200??C, ensuring functionality in harsh environments.
  • Metal TO-3 package: Provides superior thermal dissipation and mechanical stability for long-term reliability.
  • Stable DC gain: Offers a current gain between 20 and 70, facilitating predictable linear amplification performance.
  • Moderate transition frequency: 3 MHz bandwidth supports medium-speed switching and amplification.
  • Military-grade construction: Meets JAN (Joint Army-Navy) standards for quality and ruggedness.

Typical Applications

  • Power amplifiers in industrial and military communication systems requiring high voltage and current capabilities with reliable linearity.
  • Switching regulators and power control circuits where high voltage blocking and efficient current handling are critical.
  • Motor control circuits in industrial automation, benefiting from the transistor??s robust current rating and thermal stability.
  • High-voltage driver stages in test equipment and instrumentation demanding consistent performance under thermal stress.

JAN2N6350-Transistor Advantages vs Typical Alternatives

This transistor stands out due to its high collector-emitter voltage rating and robust 10A current capacity, which exceed many standard general-purpose transistors. Its metal TO-3 package ensures superior heat dissipation and mechanical durability compared to plastic-encapsulated devices. Additionally, its broad operating temperature range and JAN certification make it a reliable choice for military and industrial applications where sensitivity to temperature and environmental factors is critical. These benefits translate into enhanced reliability, stable gain characteristics, and longer operational life in demanding circuits.

JAN2N6350-Transistor Brand Info

The JAN2N6350 is a military-grade transistor originally specified under the JAN (Joint Army-Navy) standards, indicating strict quality and reliability requirements. It has been

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