The JAN2N1711S transistor is a high-performance silicon NPN bipolar junction transistor designed for general-purpose amplification and switching applications in industrial electronics. It offers a robust collector current rating and moderate power dissipation, suitable for medium-power circuits. This device exhibits reliable electrical characteristics under military-grade JAN (Joint Army-Navy) standards, ensuring durability in demanding environments. With a maximum collector-emitter voltage of 60V and a collector current of up to 1.5A, it supports efficient operation within linear and switching modes. The JAN2N1711S is ideal for engineers and sourcing professionals seeking a dependable transistor for rugged industrial applications. For detailed specifications and procurement, visit IC Manufacturer.
JAN2N1711S-Transistor Technical Specifications
Parameter
Value
Transistor Type
NPN Bipolar Junction Transistor (BJT)
Collector-Emitter Voltage (VCEO)
60 V
Collector Current (IC)
1.5 A (max)
Power Dissipation (Ptot)
1.0 W
DC Current Gain (hFE)
40 to 160 (typical range)
Transition Frequency (fT)
100 MHz (typical)
Base-Emitter Voltage (VBE)
1.2 V (max)
Junction Temperature (Tj)
+200 ??C (max)
Package Type
TO-18 Metal Can
JAN2N1711S-Transistor Key Features
High collector current capability: Supports up to 1.5A, enabling effective handling of medium power loads in switching and amplification tasks.
Robust voltage rating: 60V maximum collector-emitter voltage ensures reliable operation in various industrial power supply circuits.
Wide DC gain range: Gain between 40 and 160 allows flexibility in circuit design for both linear and switching applications.
Military-grade JAN certification: Guarantees enhanced reliability and performance under harsh environmental conditions, critical for aerospace and defense electronics.
High transition frequency: 100 MHz typical fT supports moderate-frequency amplification applications.
Thermally rugged TO-18 package: Metal can package offers superior heat dissipation and mechanical stability.
Wide operating temperature range: Junction temperature rating up to 200??C enables use in elevated temperature industrial environments.
Typical Applications
Medium-power amplifier stages in audio and industrial control systems that require stable gain and reliability.
Switching elements in automotive and aerospace circuits where ruggedness and voltage tolerance are essential.
Signal processing in sensor interfaces and instrumentation requiring linear transistor operation.
General-purpose switching in power management modules and relay drivers for industrial automation.
JAN2N1711S-Transistor Advantages vs Typical Alternatives
This transistor delivers a balanced combination of collector current capacity and voltage rating, outperforming many general-purpose BJTs in ruggedness and thermal stability. Its military JAN certification ensures superior reliability and quality control, making it preferable for critical industrial and defense applications. The TO-18 metal can package enhances heat dissipation compared to plastic encapsulated alternatives, supporting extended device longevity and consistent performance under demanding conditions.
The JAN2N1711S transistor is manufactured under JAN (Joint Army-Navy) standards, indicating a military-grade component produced by certified semiconductor manufacturers specializing in high-reliability devices. These transistors are typically sourced from established brands known for their strict quality assurance and consistency in performance, such as On Semiconductor, Fairchild Semiconductor (now part of ON Semiconductor), or Texas Instruments. The JAN prefix signifies compliance with military specifications MIL-PRF-19500, ensuring the device meets rigorous environmental and electrical criteria for aerospace, defense, and industrial use.
