2N2369AU-Transistor NPN Amplifier Transistor in TO-18 Metal Can Package by ON Semiconductor

2N2369AU-Transistor Overview

The 2N2369AU transistor is a high-speed, low-power NPN bipolar junction transistor designed for switching and amplification applications in industrial and electronic circuits. With its optimized frequency response and moderate current handling capabilities, it is suited for high-frequency analog and digital signal processing. This transistor delivers reliable performance, making it a preferred choice for engineers requiring fast switching speeds and stable operation under varied load conditions. Designed for versatility and durability, the 2N2369AU is a valuable component for signal amplification, pulse generation, and low-noise amplification tasks. For comprehensive sourcing and technical details, visit IC Manufacturer.

2N2369AU-Transistor Technical Specifications

2N2369AU-Transistor Key Features

• High transition frequency: Enables fast switching and high-frequency amplification, critical for RF and pulse circuits.
• Moderate collector current rating: Supports up to 600 mA, allowing robust operation in low to medium power applications.
• Low power dissipation: Ensures energy efficiency and thermal stability, increasing reliability in continuous operation.
• Wide operating temperature range: Suitable for harsh industrial environments, providing consistent performance under temperature extremes.

Typical Applications

• High-speed switching circuits in communication equipment, benefiting from the transistor’s fast transition frequency and low capacitance.
• Signal amplification in low-noise analog stages where moderate gain and frequency response are required.
• Pulse generation and timing circuits that leverage the fast switching capabilities of this NPN transistor.
• General-purpose amplification and switching in control and interface electronics within industrial automation systems.

2N2369AU-Transistor Advantages vs Typical Alternatives

This transistor offers a balanced combination of high-speed operation and moderate power handling, making it more suitable than typical low-frequency or high-power transistors for RF and switching applications. Its metal can package ensures better thermal dissipation and mechanical stability compared to plastic-encapsulated alternatives, enhancing reliability. Furthermore, the wide operating temperature range and consistent gain characteristics provide improved accuracy and sensitivity in demanding industrial environments.

2N2369AU-Transistor Brand Info

The 2N2369AU transistor is a well-established semiconductor device originally developed by various manufacturers adhering to JEDEC standards. It is widely available from multiple industrial semiconductor suppliers and is known for its consistent quality and reliability. This transistor is commonly produced under standard industrial specifications, ensuring interchangeability and broad compatibility across electronic applications. Its long-standing presence in the market confirms its trusted status among engineers and sourcing specialists.

FAQ

What type of transistor is the 2N2369AU?

The device is an NPN bipolar junction transistor designed for high-speed switching and amplification. It features a metal can (TO-18) package, suitable for applications requiring fast response and moderate power handling.

What is the maximum collector current rating?

The maximum continuous collector current is 600 mA, making it appropriate for low to medium power circuits such as signal amplifiers and switching devices in industrial applications.

Can this transistor operate at high frequencies?

Yes