JANSF2N3700UB-Transistor NPN Power Transistor in TO-220 Package ?C JAN Military Grade

  • This transistor amplifies electrical signals, enabling efficient current control in various circuits.
  • Its maximum voltage rating ensures stable performance under demanding electrical conditions.
  • The compact package type contributes to board-space savings and simplifies integration into tight layouts.
  • Ideal for switching applications in power management, it helps enhance system responsiveness and efficiency.
  • Manufactured under stringent quality controls, it guarantees consistent operation and long-term durability.
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JANSF2N3700UB-Transistor Overview

The JANSF2N3700UB transistor is a high-performance NPN silicon transistor designed for general-purpose switching and amplification applications. Offering reliable operation under varied voltage and current conditions, it supports continuous collector current ratings and high voltage capabilities suitable for industrial and commercial electronics designs. Its robust TO-18 metal can package ensures enhanced thermal dissipation and mechanical durability. This device is ideal for engineers requiring a dependable component for medium power amplification and switching with consistent performance. For detailed sourcing and technical support, visit IC Manufacturer.

JANSF2N3700UB-Transistor Technical Specifications

Parameter Specification
Type NPN Bipolar Junction Transistor
Collector-Emitter Voltage (VCEO) 60 V
Collector-Base Voltage (VCBO) 75 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current (IC) 200 mA (continuous)
DC Current Gain (hFE) 40 to 300 (depending on operating point)
Power Dissipation (Ptot) 625 mW
Transition Frequency (fT) 40 MHz
Package Type TO-18 Metal Can

JANSF2N3700UB-Transistor Key Features

  • High voltage capability: Enables reliable operation up to 60 V collector-emitter voltage, supporting robust switching applications.
  • Wide DC gain range: Provides flexibility for different amplification requirements, improving circuit design versatility.
  • Metal TO-18 package: Enhances thermal dissipation and mechanical strength, contributing to long-term reliability in industrial environments.
  • Moderate power dissipation: Supports up to 625 mW, suitable for medium power applications without the need for extensive heat sinking.
  • Frequency performance: 40 MHz transition frequency allows use in moderate frequency amplifier and switching circuits.

Typical Applications

  • General-purpose amplification: Suitable for low to medium power audio and signal amplification where stable gain and voltage handling are critical.
  • Switching circuits: Ideal for relay drivers, indicator controls, and low-power switching loads in industrial control systems.
  • Signal processing: Used in analog signal conditioning circuits requiring moderate frequency response and linear gain.
  • Motor control interfaces: Supports switching and amplification tasks in brushed DC motor driver circuits for industrial automation.

JANSF2N3700UB-Transistor Advantages vs Typical Alternatives

This transistor offers enhanced voltage handling and reliable gain stability compared to standard low-power transistors. Its metal TO-18 package ensures improved heat dissipation and mechanical durability, giving it an edge in industrial environments where thermal performance and reliability are paramount. The broad gain range also supports adaptable circuit design, making it a versatile choice over comparable alternatives for medium-power switching and amplification tasks.

JANSF2N3700UB-Transistor Brand Info

The JANSF2N3700UB transistor is a product aligned with JEDEC military standards for transistor reliability and performance, often sourced from established semiconductor manufacturers specializing in high-quality bipolar junction transistors. It is recognized for consistent manufacturing quality and traceability, meeting the demands of defense and industrial applications. This device typically comes from manufacturers who comply with rigorous qualification protocols ensuring stable electrical and mechanical characteristics throughout the product lifecycle.

FAQ

What are the maximum voltage ratings for the JANSF2N3700UB transistor?

The transistor supports a maximum collector-emitter voltage of 60 V and a collector-base voltage of 75 V. The emitter-base voltage rating is 5 V. These ratings ensure the transistor can handle moderate voltage levels typical in general-purpose amplification

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