JANTXV2N4236-Transistor Overview
The JANTXV2N4236 is a high-performance NPN bipolar junction transistor designed for robust switching and amplification applications in industrial and military-grade environments. Manufactured to meet stringent JAN (Joint Army-Navy) standards, this transistor delivers reliable operation under harsh conditions, including wide temperature ranges and mechanical stress. Its sturdy construction and stable electrical characteristics make it suitable for demanding power control circuits, audio amplification, and signal processing tasks. Engineers and sourcing specialists will appreciate its proven durability and consistent performance, supported by precise gain and voltage ratings. For detailed procurement and technical support, visit IC Manufacturer.
JANTXV2N4236-Transistor Technical Specifications
| Parameter | Specification |
|---|---|
| Transistor Type | NPN Bipolar Junction Transistor |
| Collector-Emitter Voltage (V_CEO) | 80 V |
| Collector-Base Voltage (V_CBO) | 100 V |
| Emitter-Base Voltage (V_EBO) | 7 V |
| Collector Current (I_C) | 10 A (max continuous) |
| Power Dissipation (P_D) | 75 W |
| DC Current Gain (h_FE) | 40 to 160 |
| Transition Frequency (f_T) | 10 MHz |
| Operating Temperature Range | -55??C to +200??C |
| Package Type | TO-3 Metal Can |
JANTXV2N4236-Transistor Key Features
- High voltage and current handling: Supports collector-emitter voltages up to 80 V and collector currents up to 10 A, enabling effective power switching in demanding circuits.
- Wide operating temperature range: Reliable functionality from -55??C to +200??C ensures performance stability in extreme environmental conditions.
- Robust TO-3 package: Provides excellent thermal dissipation and mechanical protection, improving device longevity and reliability in industrial applications.
- Wide DC current gain range: Allows designers to optimize amplification and switching efficiency depending on circuit requirements.
Typical Applications
- Power amplification and switching in industrial control systems where high voltage and current capabilities are required.
- Audio amplifier output stages, benefiting from the transistor??s high power dissipation and linear gain characteristics.
- Military and aerospace electronics demanding rugged components that maintain performance under thermal and mechanical stress.
- General-purpose amplification and switching in harsh environments, including automotive and heavy equipment controls.
JANTXV2N4236-Transistor Advantages vs Typical Alternatives
This transistor offers enhanced durability and superior power handling compared to standard commercial transistors. Its compliance with JAN standards ensures rigorous quality and reliability, making it ideal for critical applications. The wide temperature tolerance and robust metal can packaging improve thermal management and device lifespan, providing a dependable alternative where typical plastic-encapsulated transistors might fail under stress.
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JANTXV2N4236-Transistor Brand Info
The JANTXV2N4236 is a military-grade transistor originally standardized under the Joint Army-Navy (JAN) designation system, widely recognized across defense and aerospace sectors for its reliability and ruggedness. This device is typically manufactured by established semiconductor producers specializing in high-reliability components, often distributed through authorized suppliers focusing on industrial and military electronics. The JAN prefix signifies compliance with strict government standards for electrical performance and mechanical durability, ensuring the transistor??s suitability for mission-critical applications.
FAQ
What does the JAN prefix in JANTXV2N4236 signify?
The JAN prefix indicates that the transistor meets Joint Army-Navy military standards, guaranteeing high reliability, stringent quality control, and suitability for harsh environments. These standards ensure consistent performance under extreme temperature and mechanical stress conditions.
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What are the key electrical limits to consider when using this transistor?
Key limits include a maximum collector-emitter voltage of 80 V, a collector current up to 10 A, and a power dissipation rating of 75 W. Staying within these parameters ensures safe operation and prevents device damage.
What package type does this transistor use and why is it important?
The device is housed in a TO-







