2N5955-Transistor Overview
The 2N5955 transistor is a high-power PNP silicon transistor designed for general purpose amplifier and switching applications. It delivers robust performance with a collector-to-emitter voltage rating of up to 60V and a collector current capacity rated at 15A, making it suitable for demanding industrial and automotive environments. This transistor offers reliable operation with a maximum power dissipation of 115 watts, ensuring efficiency in high power circuits. Its complementary NPN counterpart and standard TO-3 package enable straightforward integration into existing designs. For sourcing and detailed product information, visit the IC Manufacturer website.
2N5955-Transistor Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-Emitter Voltage (V_CEO) | 60 | V |
| Collector-Base Voltage (V_CBO) | 60 | V |
| Emitter-Base Voltage (V_EBO) | 5 | V |
| Collector Current (I_C) | 15 | A |
| Power Dissipation (P_D) | 115 | W |
| DC Current Gain (h_FE) | 20 to 70 | ?? |
| Transition Frequency (f_T) | 2.5 | MHz |
| Operating Junction Temperature (T_J) | 200 | ??C |
| Package Type | TO-3 | ?? |
2N5955-Transistor Key Features
- High collector current capacity: Supports continuous collector currents up to 15A, enabling robust handling of high power loads in industrial circuits.
- Wide voltage ratings: Collector-emitter voltage up to 60V ensures compatibility with many medium-voltage applications without risk of breakdown.
- Reliable power dissipation: Maximum 115W dissipation rating enhances thermal management and helps maintain performance stability under demanding conditions.
- Complementary pairing: Designed to complement NPN transistors like the 2N3055, facilitating push-pull amplifier designs and balanced switching configurations.
Typical Applications
- Power amplifier stages in audio and industrial signal processing, where high current gain and thermal stability are critical for performance.
- Switching regulators and converters requiring robust transistor operation under varying load and voltage conditions.
- Motor control circuits in automotive and industrial environments, leveraging the transistor??s high current and voltage handling capabilities.
- General-purpose power switching in power supplies, inverters, and relay driver circuits demanding efficient thermal dissipation.
2N5955-Transistor Advantages vs Typical Alternatives
This transistor offers a superior combination of high collector current and voltage ratings compared to many general-purpose PNP transistors, making it ideal for demanding power applications. Its TO-3 package ensures excellent thermal dissipation, enhancing reliability and operational longevity. The broad DC current gain range supports flexible circuit design, providing improved efficiency and accuracy over typical alternatives in amplifier and switching roles.
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2N5955-Transistor Brand Info
The 2N5955 transistor is a widely recognized device originally introduced by major semiconductor manufacturers such as ON Semiconductor and Texas Instruments. It belongs to a family of power transistors commonly used in industrial and automotive electronics. The device is noted for its rugged construction and long-standing reliability in high-power applications. Its availability from multiple suppliers ensures sourcing flexibility and consistency for production-scale requirements.
FAQ
What is the maximum collector current rating of this transistor?
The maximum continuous collector current rating is 15 amperes. This allows the transistor to handle substantial current loads, making it suitable for power amplifier and switching applications where high current is necessary.
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What package type does the 2N5955 come in, and why is it important?
The transistor is housed in a TO-3 metal can package, which is important for efficient heat dissipation. This package type helps maintain device temperature within operational limits, increasing reliability in high-power applications.
Can this transistor operate at high temperatures?
Yes, it can operate up to a maximum junction temperature of






