JANTX2N4235-Transistor NPN Power Transistor in TO-66 Metal Can Package by ON Semiconductor

  • This transistor amplifies electrical signals, enabling improved control in electronic circuits.
  • Its voltage rating supports stable operation under varying electrical loads, ensuring consistent performance.
  • The compact package type offers board-space savings, facilitating efficient circuit design in tight layouts.
  • Ideal for use in switching applications, it helps manage power flow efficiently in devices.
  • Manufactured with quality standards that enhance durability and operational reliability over time.
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JANTX2N4235-Transistor Overview

The JANTX2N4235 is a high-reliability silicon NPN bipolar junction transistor designed for military and aerospace applications requiring stringent quality and performance standards. Featuring a robust maximum collector-emitter voltage and a substantial collector current rating, this transistor offers dependable switching and amplification capabilities under demanding conditions. Its hermetically sealed TO-18 metal can package ensures enhanced environmental protection and longevity. Ideal for use in precision analog circuits and power control systems, this transistor exemplifies ruggedness and consistent electrical characteristics. For sourcing and detailed information, visit IC Manufacturer.

JANTX2N4235-Transistor Technical Specifications

Parameter Specification Unit
Collector-Emitter Voltage (VCEO) 50 V
Collector-Base Voltage (VCBO) 60 V
Emitter-Base Voltage (VEBO) 7 V
Collector Current (IC) 10 A
Gain Bandwidth Product (fT) 6 MHz
DC Current Gain (hFE) 40?C160 (unitless)
Power Dissipation (PD) 1 W
Operating Temperature Range -65 to +200 ??C

JANTX2N4235-Transistor Key Features

  • High Collector Current Capacity: Supports up to 10A, enabling robust switching and amplification in power-intensive circuits.
  • Wide Operating Temperature Range: Functions reliably between -65??C and +200??C, suitable for harsh military and aerospace environments.
  • Hermetically Sealed TO-18 Package: Ensures enhanced environmental protection against moisture and contaminants, improving longevity and reliability.
  • Moderate Gain Bandwidth Product: At 6 MHz, it balances speed and gain, making it well-suited for medium-frequency applications.

Typical Applications

  • Military and aerospace analog signal amplification circuits requiring rugged, high-reliability transistors with stable gain characteristics.
  • Switching power supplies and regulators where high collector current and voltage ratings are essential.
  • Industrial control systems operating under wide temperature ranges and demanding environmental conditions.
  • High-reliability electronic assemblies, including instrumentation and sensors for harsh environments.

JANTX2N4235-Transistor Advantages vs Typical Alternatives

This transistor offers superior performance in demanding environments compared to typical commercial equivalents. Its hermetically sealed metal can package enhances durability and moisture resistance. With a collector current up to 10A and an extended temperature range, it provides greater reliability and power handling for military-grade applications. The balance between gain and frequency response ensures precise control and efficient switching, making it a preferred choice for engineers prioritizing robustness and accuracy.

JANTX2N4235-Transistor Brand Info

The JANTX2N4235 transistor is produced under stringent military specifications (JAN standard), ensuring high reliability and traceability for critical defense and aerospace applications. Typically manufactured by established semiconductor producers specializing in military-grade components, this transistor complies with rigorous quality standards including hermetic sealing, extended temperature tolerance, and electrical parameter consistency. It is part of a legacy series known for dependable performance in extreme environments, supported by detailed datasheets and qualification certifications.

FAQ

What type of transistor is the JANTX2N4235?

The JANTX2N4235 is a silicon NPN bipolar junction transistor designed for high-reliability applications. It is optimized for use in military and aerospace environments where durability and performance consistency are critical

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