MVR2N2222AUBC-Transistor NPN Amplifier Switch 40V 800mA SOT-23 Package by Microsemi

  • This transistor amplifies current, enabling efficient switching and signal control in electronic circuits.
  • It features a standard gain parameter that ensures consistent amplification performance under varied conditions.
  • The compact package design allows for reduced board space, facilitating integration into dense circuit layouts.
  • Commonly used in low-power switching applications, it supports precise control in battery-powered devices.
  • Manufactured following industry standards, it delivers dependable operation with stable electrical characteristics.
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MVR2N2222AUBC-Transistor Overview

The MVR2N2222AUBC is a robust NPN bipolar junction transistor designed for general-purpose amplification and switching applications. Offering reliable performance with a maximum collector current of 600mA and a collector-emitter voltage rating of 40V, it is well-suited for low to medium power circuits. This transistor features a gain bandwidth product that ensures efficient signal amplification, making it ideal for use in industrial control systems, signal processing, and driver stages. Its compact SOT-23 package supports high-density PCB designs, enhancing integration in space-constrained applications. For trusted sourcing and detailed technical support, visit IC Manufacturer.

MVR2N2222AUBC-Transistor Technical Specifications

Parameter Specification
Transistor Type NPN Bipolar Junction Transistor (BJT)
Collector-Emitter Voltage (VCEO) 40 V
Collector-Base Voltage (VCBO) 75 V
Emitter-Base Voltage (VEBO) 6 V
Collector Current (IC) 600 mA
Power Dissipation (Ptot) 350 mW
Gain Bandwidth Product (fT) 300 MHz
DC Current Gain (hFE) 100 to 300 (depending on operating conditions)
Package Type SOT-23 (Surface Mount)

MVR2N2222AUBC-Transistor Key Features

  • High Current Handling Capability: Supports collector currents up to 600mA, enabling effective switching and amplification in demanding circuits.
  • Wide Voltage Range: Withstand collector-emitter voltages up to 40V, suitable for versatile industrial and control applications.
  • Compact SOT-23 Package: Facilitates high-density PCB layouts and automated assembly processes, reducing system footprint.
  • Fast Switching Speed: Gain bandwidth product of 300 MHz allows efficient operation in high-frequency applications.
  • Reliable Gain Characteristics: Stable DC gain ensures predictable amplification performance across conditions.

Typical Applications

  • Switching and amplification in industrial control circuits where reliable medium power transistor operation is required.
  • Signal amplification stages within communication equipment and sensor interfaces.
  • Driver stages for relays, LEDs, and small motors in automation systems.
  • Low-noise preamplifier circuits in measurement and instrumentation devices.

MVR2N2222AUBC-Transistor Advantages vs Typical Alternatives

This transistor offers an excellent balance of current capacity, voltage tolerance, and switching speed compared to typical small-signal BJTs. The integrated SOT-23 package optimizes board space and supports surface-mount assembly, enhancing production efficiency. Its reliable gain and fast response make it preferable for applications demanding consistent amplification and switching performance, surpassing many through-hole or lower-frequency alternatives.

MVR2N2222AUBC-Transistor Brand Info

The MVR2N2222AUBC is manufactured by IC Manufacturer, a reputable supplier specializing in semiconductor components for industrial and consumer electronics. Known for stringent quality controls and comprehensive technical support, IC Manufacturer ensures this transistor meets demanding industry standards. Their focus on delivering reliable, high-performance transistors supports engineers and sourcing specialists in designing robust, scalable electronics solutions.

FAQ

What is the maximum collector current rating of this transistor?

The maximum collector current rating is 600mA, allowing the transistor to handle moderate power loads effectively in switching and amplification roles.

Can this transistor be used in high-frequency applications?

Yes. With a gain bandwidth product of 300 MHz, it supports high-frequency circuit operation

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